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      Experimental evaluation of impact ionization coefficients in Al xGa1-xN based avalanche photodiodes

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      Author(s)
      Tut, T.
      Gökkavas, M.
      Bütün, B.
      Bütün, S.
      Ülker, E.
      Özbay, Ekmel
      Date
      2006
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Electronic ISSN
      1077-3118
      Publisher
      AIP Publishing LLC
      Volume
      89
      Issue
      18
      Pages
      183524-1 - 183524-3
      Language
      English
      Type
      Article
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      Abstract
      The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky barrier, suitable for back and front illuminations, is used to determine the impact ionization coefficients of electrons and holes in an AlGaN based avalanche photodiode. © 2006 American Institute of Physics.
      Keywords
      Aluminum compounds
      Avalanche diodes
      Electrons
      Ionization
      Metallorganic chemical vapor deposition
      Solar energy
      Ionization coefficients
      Photomultiplication
      Photodiodes
      Permalink
      http://hdl.handle.net/11693/23666
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.2385216
      Collections
      • Department of Electrical and Electronics Engineering 3868
      • Department of Physics 2485
      • Institute of Materials Science and Nanotechnology (UNAM) 2098
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