Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
Author(s)
Date
2015Source Title
Physica Status Solidi. C: Current Topics in Solid State Physics
Print ISSN
1862-6351
Publisher
Wiley - V C H Verlag GmbH & Co. KGaA
Volume
12
Issue
4-5
Pages
394 - 398
Language
English
Type
ArticleItem Usage Stats
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Abstract
Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6,6-GaN core-shell nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as InN thin films deposited by HCPA-ALD using cyclopentadienyl indium and trimethylindium precursors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords
AlNGaN
InN
Atomic layer deposition (ALD)
Hollow cathode plasma
Aluminum nitride
Atoms
Cathodes
Deposition
Electrodes
Electron sources
Gallium nitride
Indium
Nanostructures
Nitrides
Pulsed laser deposition
Temperature
Thin film transistors
Core-shell nanofibers
Cyclopentadienyls
Hollow cathodes
Low impurity concentrations
UV photodetectors