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      Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures

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      Author(s)
      Ozgit Akgun, C.
      Goldenberg, E.
      Bolat, S.
      Tekcan, B.
      Kayaci, F.
      Uyar, Tamer
      Okyay, Ali Kemal
      Bıyıklı, Necmi
      Date
      2015
      Source Title
      Physica Status Solidi. C: Current Topics in Solid State Physics
      Print ISSN
      1862-6351
      Publisher
      Wiley - V C H Verlag GmbH & Co. KGaA
      Volume
      12
      Issue
      4-5
      Pages
      394 - 398
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6,6-GaN core-shell nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as InN thin films deposited by HCPA-ALD using cyclopentadienyl indium and trimethylindium precursors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
      Keywords
      AlN
      GaN
      InN
      Atomic layer deposition (ALD)
      Hollow cathode plasma
      Aluminum nitride
      Atoms
      Cathodes
      Deposition
      Electrodes
      Electron sources
      Gallium nitride
      Indium
      Nanostructures
      Nitrides
      Pulsed laser deposition
      Temperature
      Thin film transistors
      Core-shell nanofibers
      Cyclopentadienyls
      Hollow cathodes
      Low impurity concentrations
      UV photodetectors
      Permalink
      http://hdl.handle.net/11693/23569
      Published Version (Please cite this version)
      http://dx.doi.org/10.1002/pssc.201400167
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
      • Nanotechnology Research Center (NANOTAM) 1179
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