Broadband terahertz modulators using self-gated graphene capacitors
Date
2015Source Title
Journal of the Optical Society of America B: Optical Physics
Print ISSN
0740-3224
Publisher
Optical Society of America
Volume
32
Issue
9
Pages
1861 - 1866
Language
English
Type
ArticleItem Usage Stats
202
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241
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Abstract
We demonstrate a terahertz intensity modulator using a graphene supercapacitor which consists of two large-area graphene electrodes and an electrolyte medium. The mutual electrolyte gating between the graphene electrodes provides very efficient electrostatic doping with Fermi energies of 1 eV and a charge density of 8 × 1013 cm-2. We show that the graphene supercapacitor yields more than 50% modulation between 0.1 and 1.4 THz with operation voltages less than 3 V. The low insertion losses, high modulation depth over a broad spectrum, and the simplicity of the device structure are the key attributes of graphene supercapacitors for THz applications.
Keywords
CapacitorsElectrodes
Electrolytes
Graphene
Graphite electrodes
Modulation
Modulators
Broadband terahertz
Electrostatic doping
Graphene electrodes
Intensity modulators
Large-area graphene
Low insertion loss
Modulation depth
Operation voltage
Electrolytic capacitors
Permalink
http://hdl.handle.net/11693/23547Published Version (Please cite this version)
http://dx.doi.org/10.1364/JOSAB.32.001861Collections
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