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dc.contributor.authorDâna, A.en_US
dc.contributor.authorAkça, I.en_US
dc.contributor.authorErgun, O.en_US
dc.contributor.authorAydinli, A.en_US
dc.contributor.authorTuran, R.en_US
dc.contributor.authorFinstad, T. G.en_US
dc.date.accessioned2016-02-08T10:14:41Z
dc.date.available2016-02-08T10:14:41Z
dc.date.issued2007en_US
dc.identifier.issn1386-9477
dc.identifier.urihttp://hdl.handle.net/11693/23490
dc.description.abstractUnderstanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon oxide matrix was performed. Dynamic measurements of discharge dynamics are carried out. Charge decay is modelled by assuming storage of carriers in the ground states of NCs and that the decay is dominated by direct tunnelling. Discharge rates are calculated using the theoretical model for different NC sizes and densities and are compared with experimental data. Experimental results agree well with the proposed model and suggest that charge is indeed stored in the quantized energy levels of the NCs.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysica E : Low-Dimensional Systems and Nanostructuresen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.physe.2006.10.002en_US
dc.subjectCarrier storageen_US
dc.subjectCharge retentionen_US
dc.subjectNanocrystalsen_US
dc.subjectCapacitanceen_US
dc.subjectData storage equipmenten_US
dc.subjectGround stateen_US
dc.subjectMathematical modelsen_US
dc.subjectOptimizationen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectCapacitance spectroscopyen_US
dc.subjectCarrier storagesen_US
dc.subjectCharge retentionen_US
dc.subjectQuantized energy levelsen_US
dc.subjectNanocrystalsen_US
dc.titleCharge retention in quantized energy levels of nanocrystalsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage94en_US
dc.citation.epage98en_US
dc.citation.volumeNumber38en_US
dc.citation.issueNumber1-2en_US
dc.identifier.doi10.1016/j.physe.2006.10.002en_US
dc.publisherElsevier B.V.en_US


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