Charge retention in quantized energy levels of nanocrystals
Author
Dâna, A.
Akça, I.
Ergun, O.
Aydınlı, Atilla
Turan, R.
Finstad, T. G.
Date
2007Source Title
Physica E : Low-Dimensional Systems and Nanostructures
Print ISSN
1386-9477
Publisher
Elsevier B.V.
Volume
38
Issue
1-2
Pages
94 - 98
Language
English
Type
ArticleItem Usage Stats
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Abstract
Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon oxide matrix was performed. Dynamic measurements of discharge dynamics are carried out. Charge decay is modelled by assuming storage of carriers in the ground states of NCs and that the decay is dominated by direct tunnelling. Discharge rates are calculated using the theoretical model for different NC sizes and densities and are compared with experimental data. Experimental results agree well with the proposed model and suggest that charge is indeed stored in the quantized energy levels of the NCs.
Keywords
Carrier storageCharge retention
Nanocrystals
Capacitance
Data storage equipment
Ground state
Mathematical models
Optimization
Plasma enhanced chemical vapor deposition
Capacitance spectroscopy
Carrier storages
Charge retention
Quantized energy levels
Nanocrystals