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      Charge retention in quantized energy levels of nanocrystals

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      Author
      Dâna, A.
      Akça, I.
      Ergun, O.
      Aydınlı, Atilla
      Turan, R.
      Finstad, T. G.
      Date
      2007
      Source Title
      Physica E : Low-Dimensional Systems and Nanostructures
      Print ISSN
      1386-9477
      Publisher
      Elsevier B.V.
      Volume
      38
      Issue
      1-2
      Pages
      94 - 98
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon oxide matrix was performed. Dynamic measurements of discharge dynamics are carried out. Charge decay is modelled by assuming storage of carriers in the ground states of NCs and that the decay is dominated by direct tunnelling. Discharge rates are calculated using the theoretical model for different NC sizes and densities and are compared with experimental data. Experimental results agree well with the proposed model and suggest that charge is indeed stored in the quantized energy levels of the NCs.
      Keywords
      Carrier storage
      Charge retention
      Nanocrystals
      Capacitance
      Data storage equipment
      Ground state
      Mathematical models
      Optimization
      Plasma enhanced chemical vapor deposition
      Capacitance spectroscopy
      Carrier storages
      Charge retention
      Quantized energy levels
      Nanocrystals
      Permalink
      http://hdl.handle.net/11693/23490
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.physe.2006.10.002
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