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      AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain

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      Author
      Tut, Turgut
      Gokkavas, Mutlu
      Inal, Ayşe
      Özbay, Ekmel
      Date
      2007
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Electronic ISSN
      1077-3118
      Publisher
      AIP Publishing LLC
      Volume
      90
      Issue
      16
      Language
      English
      Type
      Article
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      Abstract
      The authors report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1560 under ultraviolet illumination. The solar-blind photodetectors have a sharp cutoff around 276 nm. The dark currents of the 40 μm diameter devices are measured to be lower than 8 fA for bias voltages up to 20 V. The responsivity of the photodetectors is 0.13 A/W at 272 nm under 20 V reverse bias. The thermally limited detectivity is calculated as D* = 1.4 × 1014 cm Hz1/2 W-1 for a 40 μm diameter device.
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      http://hdl.handle.net/11693/23482
      Published Version (Please cite this version)
      https://doi.org/10.1063/1.2724926
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      • Nanotechnology Research Center (NANOTAM) 1006
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