AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain
Author
Tut, Turgut
Gokkavas, Mutlu
Inal, Ayşe
Özbay, Ekmel
Date
2007Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
1077-3118
Publisher
AIP Publishing LLC
Volume
90
Issue
16
Language
English
Type
ArticleItem Usage Stats
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Abstract
The authors report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1560 under ultraviolet illumination. The solar-blind photodetectors have a sharp cutoff around 276 nm. The dark currents of the 40 μm diameter devices are measured to be lower than 8 fA for bias voltages up to 20 V. The responsivity of the photodetectors is 0.13 A/W at 272 nm under 20 V reverse bias. The thermally limited detectivity is calculated as D* = 1.4 × 1014 cm Hz1/2 W-1 for a 40 μm diameter device.