Comparison of trimethylgallium and triethylgallium as "ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition
Date
2016-02
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Source Title
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Print ISSN
0734-2101
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Publisher
AVS Science and Technology Society
Volume
34
Issue
1
Pages
01A137-1 - 01A137-6
Language
English
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Abstract
GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used in order to study the effect of group-III precursors. The films were characterized by grazing incidence x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Refractive index follows the same trend of crystalline quality, mean grain, and crystallite sizes. GaN layers grown using TMG precursor exhibited improved structural and optical properties when compared to GaN films grown with TEG precursor.
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Keywords
Atomic force microscopy , Atomic layer deposition , Cathodes , Deposition , Electrodes , Electron sources , Films , Gallium nitride , Optical properties , Pulsed laser deposition , Refractive index , Spectroscopic ellipsometry , Ultrathin films , X ray diffraction , Crystalline quality , Grazing incidence X-ray diffraction , Hollow cathodes , Si (100) substrate , Source material , Structural and optical properties , Triethyl galliums , Trimethylgallium , X ray photoelectron spectroscopy