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      Comparison of trimethylgallium and triethylgallium as "ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition

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      Author(s)
      Alevli, M.
      Haider A.
      Kizir S.
      Leghari, S. A.
      Bıyıklı, Necmi
      Date
      2016-02
      Source Title
      Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
      Print ISSN
      0734-2101
      Publisher
      AVS Science and Technology Society
      Volume
      34
      Issue
      1
      Pages
      01A137-1 - 01A137-6
      Language
      English
      Type
      Article
      Item Usage Stats
      230
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      307
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      Abstract
      GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used in order to study the effect of group-III precursors. The films were characterized by grazing incidence x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Refractive index follows the same trend of crystalline quality, mean grain, and crystallite sizes. GaN layers grown using TMG precursor exhibited improved structural and optical properties when compared to GaN films grown with TEG precursor.
      Keywords
      Atomic force microscopy
      Atomic layer deposition
      Cathodes
      Deposition
      Electrodes
      Electron sources
      Films
      Gallium nitride
      Optical properties
      Pulsed laser deposition
      Refractive index
      Spectroscopic ellipsometry
      Ultrathin films
      X ray diffraction
      Crystalline quality
      Grazing incidence X-ray diffraction
      Hollow cathodes
      Si (100) substrate
      Source material
      Structural and optical properties
      Triethyl galliums
      Trimethylgallium
      X ray photoelectron spectroscopy
      Permalink
      http://hdl.handle.net/11693/23480
      Published Version (Please cite this version)
      https://doi.org/10.1116/1.4937725
      Collections
      • Institute of Materials Science and Nanotechnology (UNAM) 2260
      • Nanotechnology Research Center (NANOTAM) 1179
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