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dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorAcar, S.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorGokden, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:14:28Z
dc.date.available2016-02-08T10:14:28Z
dc.date.issued2007en_US
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/23476
dc.description.abstractHall effect measurements on undoped Al0.25Ga0.75N/GaN heterostructures grown by a metalorganic chemical vapour deposition (MOCVD) technique have been carried out as a function of temperature (20-350 K) and magnetic field (0-1.5 T). Magnetic field dependent Hall data were analysed using the quantitative mobility spectrum analysis (QMSA) technique. The mobility and density within the two-dimensional electron gas (2DEG) at the Al 0.25Ga0.75N/GaN interface and within the underlying GaN layer were successfully separated by QMSA. Mobility analysis has been carried out using both the measured Hall data at a single field and the extracted data from QMSA. Analysis of the temperature-dependent mobility of 2DEG extracted from QMSA indicates that the interface roughness and alloy disorder scattering mechanisms are the dominant scattering mechanisms at low temperatures while at high temperatures only polar optical phonon scattering is the dominant mechanism. Al0.25Ga0.75N/GaN interface related parameters such as well width, deformation potential constant and correlation length were also accurately obtained from the fits of the simple analytical expressions of scattering mechanisms to the 2DEG mobility.en_US
dc.language.isoEnglishen_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.relation.isversionofhttp://doi.org/10.1088/0268-1242/22/5/015en_US
dc.titleScattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructuresen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.citation.spage543en_US
dc.citation.epage548en_US
dc.citation.volumeNumber22en_US
dc.citation.issueNumber5en_US
dc.identifier.doi10.1088/0268-1242/22/5/015en_US
dc.publisherInstitute of Physics Publishing Ltd.en_US
dc.contributor.bilkentauthorÖzbay, Ekmel
dc.identifier.eissn1361-6641


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