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      Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures

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      Author
      Lisesivdin, S. B.
      Acar, S.
      Kasap, M.
      Ozcelik, S.
      Gokden, S.
      Özbay, Ekmel
      Date
      2007
      Source Title
      Semiconductor Science and Technology
      Print ISSN
      0268-1242
      Electronic ISSN
      1361-6641
      Publisher
      Institute of Physics Publishing Ltd.
      Volume
      22
      Issue
      5
      Pages
      543 - 548
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Hall effect measurements on undoped Al0.25Ga0.75N/GaN heterostructures grown by a metalorganic chemical vapour deposition (MOCVD) technique have been carried out as a function of temperature (20-350 K) and magnetic field (0-1.5 T). Magnetic field dependent Hall data were analysed using the quantitative mobility spectrum analysis (QMSA) technique. The mobility and density within the two-dimensional electron gas (2DEG) at the Al 0.25Ga0.75N/GaN interface and within the underlying GaN layer were successfully separated by QMSA. Mobility analysis has been carried out using both the measured Hall data at a single field and the extracted data from QMSA. Analysis of the temperature-dependent mobility of 2DEG extracted from QMSA indicates that the interface roughness and alloy disorder scattering mechanisms are the dominant scattering mechanisms at low temperatures while at high temperatures only polar optical phonon scattering is the dominant mechanism. Al0.25Ga0.75N/GaN interface related parameters such as well width, deformation potential constant and correlation length were also accurately obtained from the fits of the simple analytical expressions of scattering mechanisms to the 2DEG mobility.
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      http://hdl.handle.net/11693/23476
      Published Version (Please cite this version)
      http://doi.org/10.1088/0268-1242/22/5/015
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      • Nanotechnology Research Center (NANOTAM) 1006
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