Experimental and theoretical studies of transport through large scale, partially aligned arrays of single-walled carbon nanotubes in thin film type transistors
Author
Kocabas, C.
Pimparkar, N.
Yesilyurt O.
Kang, S.J.
Alam, M.A.
Rogers J.A.
Date
2007Source Title
Nano Letters
Print ISSN
15306984
Volume
7
Issue
5
Pages
1195 - 1202
Language
English
Type
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Show full item recordAbstract
Gate-modulated transport through partially aligned films of single-walled carbon nanotubes (SWNTs) in thin film type transistor structures are studied experimentally and theoretically. Measurements are reported on SWNTs grown by chemical vapor deposition with systematically varying degrees of alignment and coverage in transistors with a range of channel lengths and orientations perpendicular and parallel to the direction of alignment. A first principles stick-percolation-based transport model provides a simple, yet quantitative framework to interpret the sometimes counterintuitive transport parameters measured in these devices. The results highlight, for example, the dramatic influence of small degrees of SWNT misalignment on transistor performance and imply that coverage and alignment are correlated phenomena and therefore should be simultaneously optimized. The transport characteristics reflect heterogeneity in the underlying anisotropic metal-semiconductor stick-percolating network and cannot be reproduced by classical transport models. © 2007 American Chemical Society.
Keywords
Channel lengthsPartially aligned arrays
Transistor performance
Transport models
Alignment
Chemical vapor deposition
Film growth
Thin film transistors
Single-walled carbon nanotubes (SWCN)