Growth of Ge nanoparticles on SiO2 / Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films
Date
2007Source Title
Thin Solid Films
Print ISSN
0040-6090
Publisher
Elsevier B.V.
Volume
515
Issue
16
Pages
6381 - 6384
Language
English
Type
ArticleItem Usage Stats
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Abstract
Multilayer germanosilicate (Ge:SiO2) films have been grown by plasma enhanced chemical vapor deposition. Each Ge:SiO2 layer is separated by a pure SiO2 layer. The samples were heat treated at 900 °C for 15 and 45 min. Transmission electron microscopy investigations show precipitation of particles in the layers of highest Ge concentration. Furthermore there is evidence of diffusion between the layers. This paper focuses mainly on observed growth of Ge particles close to the interface, caused by Ge diffusion from the Ge:SiO2 layer closest to the interface through a pure SiO2 layer and to the interface. The particles grow as spheres in a direction away from the interface. Particles observed after 15 min anneal time are 4 nm in size and are amorphous, while after 45 min anneal time they are 7 nm in size and have a crystalline diamond type Ge structure.
Keywords
DiffusionGe
Interfaces
Nanoparticle
Diffusion
Germanium
Interfaces (materials)
Plasma enhanced chemical vapor deposition
Silica
Thin films
Transmission electron microscopy
Crystalline diamonds
Ge concentration
Multilayer germanosilicate
Nanoparticles