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      Growth of Ge nanoparticles on SiO2 / Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films

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      Author(s)
      Foss, S.
      Finstad, T. G.
      Dana, A.
      Aydınlı, Atilla
      Date
      2007
      Source Title
      Thin Solid Films
      Print ISSN
      0040-6090
      Publisher
      Elsevier B.V.
      Volume
      515
      Issue
      16
      Pages
      6381 - 6384
      Language
      English
      Type
      Article
      Item Usage Stats
      210
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      159
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      Abstract
      Multilayer germanosilicate (Ge:SiO2) films have been grown by plasma enhanced chemical vapor deposition. Each Ge:SiO2 layer is separated by a pure SiO2 layer. The samples were heat treated at 900 °C for 15 and 45 min. Transmission electron microscopy investigations show precipitation of particles in the layers of highest Ge concentration. Furthermore there is evidence of diffusion between the layers. This paper focuses mainly on observed growth of Ge particles close to the interface, caused by Ge diffusion from the Ge:SiO2 layer closest to the interface through a pure SiO2 layer and to the interface. The particles grow as spheres in a direction away from the interface. Particles observed after 15 min anneal time are 4 nm in size and are amorphous, while after 45 min anneal time they are 7 nm in size and have a crystalline diamond type Ge structure.
      Keywords
      Diffusion
      Ge
      Interfaces
      Nanoparticle
      Diffusion
      Germanium
      Interfaces (materials)
      Plasma enhanced chemical vapor deposition
      Silica
      Thin films
      Transmission electron microscopy
      Crystalline diamonds
      Ge concentration
      Multilayer germanosilicate
      Nanoparticles
      Permalink
      http://hdl.handle.net/11693/23443
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.tsf.2006.11.094
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