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dc.contributor.authorGezici, Sinanen_US
dc.contributor.authorMolisch, A. F.en_US
dc.contributor.authorPoor, H.V.en_US
dc.contributor.authorKobayashi, H.en_US
dc.date.accessioned2016-02-08T10:13:41Z
dc.date.available2016-02-08T10:13:41Z
dc.date.issued2007en_US
dc.identifier.issn0090-6778
dc.identifier.urihttp://hdl.handle.net/11693/23421
dc.description.abstractIn time hopping impulse radio, Nf pulses of duration Tc are transmitted for each information symbol. This gives rise to two types of processing gains: i) pulse combining gain, which is a factor Nf, and (ii) pulse spreading gain, which is Nc=Tf/Tc, where Tf is the mean interval between two subsequent pulses. This paper investigates the tradeoff between these two types of processing gains in the presence of timing jitter. First, an additive white Gaussian noise (AWGN) channel is considered, and approximate closed-form expressions for bit error probability (BEP) are derived for impulse radio systems with and without pulse-based polarity randomization. Both symbol-synchronous and chip-synchronous scenarios are considered. The effects of multiple-access interference (MAI) and timing jitter on the selection of optimal system parameters are explained through theoretical analysis. Finally, a multipath scenario is considered, and the tradeoff between processing gains of a synchronous impulse radio system with pulse-based polarity randomization is analyzed. The effects of the timing jitter, MAI, and interframe interference (IFI) are investigated. Simulation studies support the theoretical results.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Transactions on Communicationsen_US
dc.relation.isversionofhttps://doi.org/10.1109/TCOMM.2007.902536en_US
dc.subjectImpulse radio ultra wideband (IR-UWB)en_US
dc.subjectInterframe interference (IFI)en_US
dc.subjectMultiple-access interference (MAI)en_US
dc.subjectRake receiveren_US
dc.subjectTiming jitteren_US
dc.titleThe tradeoff between processing gains of an impulse Radio UWB system in the presence of timing jitteren_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage1504en_US
dc.citation.epage1515en_US
dc.citation.volumeNumber55en_US
dc.citation.issueNumber8en_US
dc.identifier.doi10.1109/TCOMM.2007.902536en_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.contributor.bilkentauthorGezici, Sinan
dc.identifier.eissn1558-0857


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