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      InGaN green light emitting diodes with deposited nanoparticles

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      Author(s)
      Butun, B.
      Cesario J.
      Enoch, S.
      Quidant, R.
      Özbay, Ekmel
      Date
      2007
      Source Title
      Photonics and Nanostructures - Fundamentals and Applications
      Print ISSN
      1569-4410
      Electronic ISSN
      1569-4429
      Publisher
      Elsevier BV
      Volume
      5
      Issue
      2-3
      Pages
      86 - 90
      Language
      English
      Type
      Article
      Item Usage Stats
      223
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      226
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      Abstract
      We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal-organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement.
      Keywords
      GaN
      InGaN
      MOCVD
      Light-emitting diode (LED)
      Nanoparticle
      Surface plasmon
      Silver
      Fourier modal method
      Plasmon
      Permalink
      http://hdl.handle.net/11693/23361
      Published Version (Please cite this version)
      https://doi.org/10.1016/j.photonics.2007.07.005
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
      • Nanotechnology Research Center (NANOTAM) 1179
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