InGaN green light emitting diodes with deposited nanoparticles
Date
2007Source Title
Photonics and Nanostructures - Fundamentals and Applications
Print ISSN
1569-4410
Electronic ISSN
1569-4429
Publisher
Elsevier BV
Volume
5
Issue
2-3
Pages
86 - 90
Language
English
Type
ArticleItem Usage Stats
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Abstract
We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal-organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement.
Keywords
GaNInGaN
MOCVD
Light-emitting diode (LED)
Nanoparticle
Surface plasmon
Silver
Fourier modal method
Plasmon