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dc.contributor.authorAbedinpour, S. H.en_US
dc.contributor.authorPolini, M.en_US
dc.contributor.authorMacDonald, A. H.en_US
dc.contributor.authorTanatar, B.en_US
dc.contributor.authorTosi, M. P.en_US
dc.contributor.authorVignale, G.en_US
dc.date.accessioned2016-02-08T10:12:18Z
dc.date.available2016-02-08T10:12:18Z
dc.date.issued2007en_US
dc.identifier.issn0031-9007
dc.identifier.urihttp://hdl.handle.net/11693/23332
dc.description.abstractThe pseudospin degree of freedom in a semiconductor bilayer gives rise to a collective mode analogous to the ferromagnetic-resonance mode of a ferromagnet. We present a many-body theory of the dependence of the energy and the damping of this mode on layer separation d. Based on these results, we discuss the possibilities of realizing transport-current driven pseudospin-transfer oscillators in semiconductors, and of using the pseudospin-transfer effect as an experimental probe of intersubband plasmons.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysical Review Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.99.206802en_US
dc.subjectElectron transport propertiesen_US
dc.subjectFerromagnetic materialsen_US
dc.subjectMultilayersen_US
dc.subjectResonanceen_US
dc.subjectSemiconductor materialsen_US
dc.subjectIntersubband plasmonsen_US
dc.subjectPseudospinen_US
dc.subjectPseudospin-transfer oscillatorsen_US
dc.subjectSemiconductor bilayeren_US
dc.subjectSpin dynamicsen_US
dc.titleTheory of the Pseudospin resonance in semiconductor bilayersen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage206802-1en_US
dc.citation.epage206802-4en_US
dc.citation.volumeNumber99en_US
dc.citation.issueNumber20en_US
dc.identifier.doi10.1103/PhysRevLett.99.206802en_US
dc.publisherThe American Physical Societyen_US
dc.identifier.eissn1079-7114


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