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dc.contributor.authorAkman, N.en_US
dc.contributor.authorDurgun, Enginen_US
dc.contributor.authorCahangirov, S.en_US
dc.contributor.authorÇıracı, Salimen_US
dc.date.accessioned2016-02-08T10:10:54Z
dc.date.available2016-02-08T10:10:54Z
dc.date.issued2007en_US
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/11693/23253
dc.description.abstractMechanical properties, atomic and energy band structures of bare and hydrogen-passivated Sin Gen nanowire superlattices have been investigated by using first-principles pseudopotential plane-wave method. Undoped, tetrahedral Si and Ge nanowire segments join pseudomorphically and can form superlattice with atomically sharp interface. We found that Sin nanowires are stiffer than Gen nanowires. Hydrogen passivation makes these nanowires and Sin Gen nanowire superlattice even more stiff. Upon heterostructure formation, superlattice electronic states form subbands in momentum space. Band lineups of Si and Ge zones result in multiple quantum wells, where specific states at the band edges and in band continua are confined. The electronic structure of the nanowire superlattice depends on the length and cross section geometry of constituent Si and Ge segments. Since bare Si and Ge nanowires are metallic and the band gaps of hydrogenated ones vary with the diameter, Sin Gen superlattices offer numerous alternatives for multiple quantum well devices with their leads made from the constituent metallic nanowires.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysical Review B - Condensed Matter and Materials Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.76.245427en_US
dc.titleConfined states in multiple quantum well structures of Sin Gen nanowire superlatticesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.citation.spage245427-1en_US
dc.citation.epage245427-7en_US
dc.citation.volumeNumber76en_US
dc.citation.issueNumber24en_US
dc.identifier.doi10.1103/PhysRevB.76.245427en_US
dc.publisherAmerican Physical Societyen_US
dc.contributor.bilkentauthorÇıracı, Salim
dc.contributor.bilkentauthorDurgun, Engin


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