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dc.contributor.authorAkça, İmran B.en_US
dc.contributor.authorDâna, Aykutluen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorTuran, R.en_US
dc.date.accessioned2016-02-08T10:10:16Z
dc.date.available2016-02-08T10:10:16Z
dc.date.issued2008-02en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/23204
dc.description.abstractElectron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.2835455en_US
dc.subjectAnnealingen_US
dc.subjectElectric dischargesen_US
dc.subjectElectronsen_US
dc.subjectGermaniumen_US
dc.subjectNanocrystalsen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectAnnealing temperaturesen_US
dc.subjectDischarge dynamicsen_US
dc.subjectGermanium nanocrystal flash memoriesen_US
dc.subjectFlash memoryen_US
dc.titleComparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memoriesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentAdvanced Research Laboratories (ARL)
dc.citation.spage1en_US
dc.citation.epage3en_US
dc.citation.volumeNumber92en_US
dc.citation.issueNumber5en_US
dc.identifier.doi10.1063/1.2835455en_US
dc.publisherAIP Publishingen_US
dc.contributor.bilkentauthorAkça, İmran B.
dc.contributor.bilkentauthorDâna, Aykutlu
dc.contributor.bilkentauthorAydınlı, Atilla
dc.identifier.eissn1077-3118


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