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      Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories

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      Author(s)
      Akça, İmran B.
      Dâna, Aykutlu
      Aydınlı, Atilla
      Turan, R.
      Date
      2008-02
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Electronic ISSN
      1077-3118
      Publisher
      AIP Publishing
      Volume
      92
      Issue
      5
      Pages
      1 - 3
      Language
      English
      Type
      Article
      Item Usage Stats
      164
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      93
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      Abstract
      Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons.
      Keywords
      Annealing
      Electric discharges
      Electrons
      Germanium
      Nanocrystals
      Plasma enhanced chemical vapor deposition
      Annealing temperatures
      Discharge dynamics
      Germanium nanocrystal flash memories
      Flash memory
      Permalink
      http://hdl.handle.net/11693/23204
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.2835455
      Collections
      • Advanced Research Laboratories (ARL) 35
      • Department of Physics 2397
      • Institute of Materials Science and Nanotechnology (UNAM) 1930
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