Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity
Applied Physics Letters
AIP Publishing LLC
103502-1 - 103502-3
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We report on the high performance solar-blind AlGaN-based p-i-n photodetectors that are grown by metal-organic chemical vapor deposition on c -plane sapphire substrates. The dark current of the 200 μm diameter devices was measured to be on the order of 5 fA for bias voltages up to 10 V. The breakdown voltages were higher than 200 V. The responsivities of the photodetectors were 0.052 and 0.093 AW at 280 nm under 0 and 40 V reverse biases, respectively. We achieved a detectivity of 7.5× 1014 cm Hz12 W for 200 μm diameter AlGaN p-i-n detectors.