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dc.contributor.authorZhang, Y.P.en_US
dc.contributor.authorZhang, Z.-H.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorTan, S.T.en_US
dc.contributor.authorJu, Z.G.en_US
dc.contributor.authorZhang X.L.en_US
dc.contributor.authorJi, Y.en_US
dc.contributor.authorWang L.C.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorHasanov, N.en_US
dc.contributor.authorZhu, B.B.en_US
dc.contributor.authorLu, S.P.en_US
dc.contributor.authorSun X.W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2016-02-08T10:09:33Z
dc.date.available2016-02-08T10:09:33Z
dc.date.issued2015en_US
dc.identifier.issn10944087
dc.identifier.urihttp://hdl.handle.net/11693/23148
dc.description.abstractIn this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased QW number, a reduced electron leakage can be achieved and hence the efficiency droop can be reduced when a constant Shockley-Read-Hall (SRH) nonradiative recombination lifetime is used for all the samples. However, the experimental results indicate that, though the efficiency droop is suppressed, the LED optical power is first improved and then degraded with the increasing QW number. The analysis of the measured external quantum efficiency (EQE) with the increasing current revealed that an increasingly dominant SRH nonradiative recombination is induced with more epitaxial QWs, which can be related to the defect generation due to the strain relaxation, especially when the effective thickness exceeds the critical thickness. These observations were further supported by the carrier lifetime measurement using a pico-second time-resolved photoluminescence (TRPL) system, which allowed for a revised numerical modeling with the different SRH lifetimes considered. This work provides useful guidelines on choosing the critical QW number when designing LED structures. © 2014 Optical Society of America.en_US
dc.language.isoEnglishen_US
dc.source.titleOptics Expressen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OE.23.000A34en_US
dc.subjectCarrier lifetimeen_US
dc.subjectEfficiencyen_US
dc.subjectQuantum efficiencyen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectCarrier lifetime measurementsen_US
dc.subjectEffective thicknessen_US
dc.subjectExternal quantum efficiencyen_US
dc.subjectIngan/gan lightemitting diodes (LEDs)en_US
dc.subjectNon-radiative recombinationsen_US
dc.subjectNumerical computationsen_US
dc.subjectShockley read hallsen_US
dc.subjectTime-resolved photoluminescenceen_US
dc.subjectLight emitting diodesen_US
dc.titleNonradiative recombination-Critical in choosing quantum well number for InGaN/GaN light-emitting diodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spageA34en_US
dc.citation.epageA42en_US
dc.citation.volumeNumber23en_US
dc.citation.issueNumber3en_US
dc.identifier.doi10.1364/OE.23.000A34en_US
dc.publisherOptical Society of American (OSA)en_US
dc.contributor.bilkentauthorDemir, Hilmi Volkan


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