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      Study of the power performance of gaN based HEMTs with varying field plate lengths

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      Author
      Kurt G.
      Toprak, A.
      Sen O.A.
      Özbay, Ekmel
      Date
      2015
      Source Title
      International Journal of Circuits, Systems and Signal Processing
      Print ISSN
      19984464
      Publisher
      North Atlantic University Union
      Volume
      9
      Pages
      174 - 179
      Language
      English
      Type
      Article
      Item Usage Stats
      129
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      Abstract
      In this paper, we report the optimum power performance of GaN based high-electron-mobility-transistors (HEMTs) on SiC substrate with the field plates of various dimensions. The AlGaN/GaN HEMTs are fabricated with 0.6 µm gate length, 3 µm drain-source space. And also, the field plate structures with the lengths of 0.2, 0.3, 0.5, and 0.7 µm have been fabricated on these HEMTs. Great enhancement in radio frequency (RF) output power density was achieved with acceptable compromise in small signal gain. A HEMT of 0.5 µm field plate length and 800 µm gate width is biased under 35 V, at 3 dB gain compression, The results showed that we obtained a continuous wave output power of 36.2 dBm (5.2 W/mm), power-added efficiency (PAE) of 33% and a small signal gain of 11.4 dB from this device. We also could achieve a continuous wave output power of 37.2 dBm (5.2 W/mm), poweradded efficiency (PAE) of 33.7% and a small gain of 10.7 dB from another HEMT with 0.5 µm field plate length and 1000 µm gate width. These results were obtained at 8 GHz without using a via hole technology. The results seem very stunning in this respect. © 2015, North Atlantic University Union. All rights reserved.
      Keywords
      Coplanar waveguide
      Field plate
      GaN HEMT
      Power amplifiers
      RF power applications
      Coplanar waveguides
      Field effect transistors
      Gallium alloys
      Gallium nitride
      Plates (structural components)
      Power amplifiers
      Radio frequency amplifiers
      Silicon carbide
      Continuous wave output power
      Field plates
      Field-plate structures
      GaN HEMTs
      High electron mobility transistor (HEMTs)
      Output power density
      Power-added efficiency
      RF power applications
      High electron mobility transistors
      Permalink
      http://hdl.handle.net/11693/23092
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      • Department of Electrical and Electronics Engineering 3524
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