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dc.contributor.authorYildirim, H.en_US
dc.contributor.authorBulutay, C.en_US
dc.date.accessioned2016-02-08T10:08:19Z
dc.date.available2016-02-08T10:08:19Z
dc.date.issued2008en_US
dc.identifier.issn0030-4018
dc.identifier.urihttp://hdl.handle.net/11693/23053
dc.description.abstractThird-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide band-gap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive index, two-photon absorption and optical switching parameter are examined from small clusters to NCs up to a size of 3 nm. Compared to bulk values, Si NCs show higher third-order optical nonlinearities and much wider two-photon absorption-free energy gap which gives rise to enhancement in the optical switching parameter.en_US
dc.language.isoEnglishen_US
dc.source.titleOptics Communicationsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.optcom.2008.04.042en_US
dc.subjectEmbedded nanocrystalsen_US
dc.subjectOptical switching parameteren_US
dc.subjectThird-order nonlinearitiesen_US
dc.subjectEnergy gapen_US
dc.subjectNanocrystalsen_US
dc.subjectRefractive indexen_US
dc.subjectSilicon compoundsen_US
dc.subjectEmbedded nanocrystalsen_US
dc.subjectSi nanocrystals (NC)en_US
dc.subjectOptical switchesen_US
dc.titleEnhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: A theoretical assessmenten_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage4118en_US
dc.citation.epage4120en_US
dc.citation.volumeNumber281en_US
dc.citation.issueNumber15-16en_US
dc.identifier.doi10.1016/j.optcom.2008.04.042en_US
dc.publisherElsevieren_US


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