Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: A theoretical assessment
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Third-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide band-gap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive index, two-photon absorption and optical switching parameter are examined from small clusters to NCs up to a size of 3 nm. Compared to bulk values, Si NCs show higher third-order optical nonlinearities and much wider two-photon absorption-free energy gap which gives rise to enhancement in the optical switching parameter.
Optical switching parameter
Si nanocrystals (NC)
Published Version (Please cite this version)http://dx.doi.org/10.1016/j.optcom.2008.04.042
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