The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates

Date

2008

Authors

Caban, P.
Kosciewicz, K.
Strupinski, W.
Wojcik, M.
Gaca, J.
Szmidt, J.
Ozturk, M.
Özbay, Ekmel

Editor(s)

Advisor

Supervisor

Co-Advisor

Co-Supervisor

Instructor

BUIR Usage Stats
3
views
17
downloads

Citation Stats

Series

Abstract

The influence of surface preparation and off-cut of 4H-SiC substrates on morphological and structural properties of GaN grown by low-pressure metalorganic vapor phase epitaxy was studied. Substrate etching has an impact on the surface roughness of epilayers and improves its crystal quality. The GaN layers were characterized by atomic force microscopy (AFM) and high-resolution X-ray diffractometry (HRXRD) measurements. It was observed that on-axis 4H-SiC is most suitable for GaN epitaxy and that substrate etching improves the surface morphology of epilayer.

Source Title

Journal of Crystal Growth

Publisher

Elsevier BV * North-Holland

Course

Other identifiers

Book Title

Keywords

Degree Discipline

Degree Level

Degree Name

Citation

Published Version (Please cite this version)

Language

English

Type

Article