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dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorBalkan, N.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:05:00Z
dc.date.available2016-02-08T10:05:00Z
dc.date.issued2008-07-14en_US
dc.identifier.issn0026-2692
dc.identifier.urihttp://hdl.handle.net/11693/22811
dc.description.abstractWe report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron mobility transistor (HEMT) structures for a special case. Extraction of the conduction channels from the magnetic field-dependent data can present number of problems; even the most recent methods encounter great difficulties. For the GaN-based HEMT structures which have lower mobilities and larger effective masses than that of GaAs-based counterparts, these difficulties become more prominent. In this study, we describe a simple method for magnetotransport analysis to extract conduction channels successfully for a special case that is commonly encountered: one bulk channel and one two-dimensional electron gas (2DEG) channel. Advantage of this method is mainly its simplicity. The analysis can be done with only two magnetic field-dependent measurements per temperature step. The method is applied to the magnetotransport results of an unintentionally doped AlGaN/AlN/GaN/AlN heterostructure over a temperature range of 29-350 K and in a magnetic field range of 0-1.5 T (μB<1). The results are then compared with those obtained using a commercial package for these calculations namely: quantitative mobility spectrum analysis (QMSA).en_US
dc.language.isoEnglishen_US
dc.source.titleMicroelectronics Journalen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.mejo.2008.06.006en_US
dc.subjectHEMTen_US
dc.subjectMixed conductionen_US
dc.subjectMODFETen_US
dc.subjectMulti-carrieren_US
dc.subjectParallel conductionen_US
dc.subjectQMSAen_US
dc.titleA simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTsen_US
dc.typeArticleen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage413en_US
dc.citation.epage417en_US
dc.citation.volumeNumber40en_US
dc.citation.issueNumber3en_US
dc.identifier.doi10.1016/j.mejo.2008.06.006en_US
dc.publisherELSEVIERen_US
dc.contributor.bilkentauthorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828en_US


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