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      A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs

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      Author
      Lisesivdin, S. B.
      Balkan, N.
      Özbay, Ekmel
      Date
      2008-07-14
      Source Title
      Microelectronics Journal
      Print ISSN
      0026-2692
      Publisher
      ELSEVIER
      Volume
      40
      Issue
      3
      Pages
      413 - 417
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron mobility transistor (HEMT) structures for a special case. Extraction of the conduction channels from the magnetic field-dependent data can present number of problems; even the most recent methods encounter great difficulties. For the GaN-based HEMT structures which have lower mobilities and larger effective masses than that of GaAs-based counterparts, these difficulties become more prominent. In this study, we describe a simple method for magnetotransport analysis to extract conduction channels successfully for a special case that is commonly encountered: one bulk channel and one two-dimensional electron gas (2DEG) channel. Advantage of this method is mainly its simplicity. The analysis can be done with only two magnetic field-dependent measurements per temperature step. The method is applied to the magnetotransport results of an unintentionally doped AlGaN/AlN/GaN/AlN heterostructure over a temperature range of 29-350 K and in a magnetic field range of 0-1.5 T (μB<1). The results are then compared with those obtained using a commercial package for these calculations namely: quantitative mobility spectrum analysis (QMSA).
      Keywords
      HEMT
      Mixed conduction
      MODFET
      Multi-carrier
      Parallel conduction
      QMSA
      Permalink
      http://hdl.handle.net/11693/22811
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.mejo.2008.06.006
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Nanotechnology Research Center (NANOTAM) 1006
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