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dc.contributor.authorAkram, R.en_US
dc.contributor.authorDede, M.en_US
dc.contributor.authorOral, A.en_US
dc.date.accessioned2016-02-08T10:04:34Z
dc.date.available2016-02-08T10:04:34Z
dc.date.issued2009en_US
dc.identifier.issn1071-1023
dc.identifier.urihttp://hdl.handle.net/11693/22774
dc.description.abstractThe authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures. A novel method of quartz tuning fork atomic force microscopy feedback has been used which provides extremely simple operation in atmospheric pressures, high-vacuum, and variable-temperature environments and enables very high magnetic and reasonable topographic resolution to be achieved simultaneously. Micro-Hall probes were produced using optical lithography and reactive ion etching process. The active area of all different types of Hall probes were 1×1 μ m2. Electrical and magnetic characteristics show Hall coefficient, carrier concentration, and series resistance of the hall sensors to be 10 mG, 6.3× 1012 cm-2, and 12 k at 25 °C and 7 mG, 8.9× 1012 cm-2 and 24 k at 125 °C for AlGaNGaN two-dimensional electron gas (2DEG), 0.281 mG, 2.2× 1014 cm-2, and 139 k at 25 °C and 0.418 mG, 1.5× 1014 cm-2 and 155 k at 100 °C for Si and 5-10 mG, 6.25× 1012 cm-2, and 12 k at 25 °C for pseudomorphic high electron mobility transistors (PHEMT) 2DEG Hall probe. Scan of magnetic field and topography of hard disc sample at variable temperatures using all three kinds of probes are presented. The best low noise image was achieved at temperatures of 25, 100, and 125 °C for PHEMT, Si, and AlGaNGaN Hall probes, respectively. This upper limit on the working temperature can be associated with their band gaps and noise associated with thermal activation of carriers at high temperatures.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen_US
dc.relation.isversionofhttps://doi.org/10.1116/1.3056172en_US
dc.subjectActive areasen_US
dc.subjectAlgan ganen_US
dc.subjectAtomic forcesen_US
dc.subjectBand gapsen_US
dc.subjectComparative studiesen_US
dc.subjectHall coefficientsen_US
dc.subjectHall probe sensorsen_US
dc.subjectHall probesen_US
dc.subjectHall sensorsen_US
dc.subjectHard discsen_US
dc.subjectHigh temperaturesen_US
dc.subjectHigh vacuumsen_US
dc.subjectImaging capabilitiesen_US
dc.subjectLow-noise imagesen_US
dc.subjectMagnetic characteristicsen_US
dc.subjectNovel methodsen_US
dc.subjectOptical lithographiesen_US
dc.subjectPseudomorphic high electron-mobility transistorsen_US
dc.subjectQuartz tuning forksen_US
dc.subjectReactive ionsen_US
dc.subjectScanning Hall probe microscopiesen_US
dc.subjectSeries resistancesen_US
dc.subjectSimple operationsen_US
dc.subjectThermal activationsen_US
dc.subjectTwo-dimensional electron gasses (2DEG)en_US
dc.subjectUpper limitsen_US
dc.subjectVariable temperaturesen_US
dc.subjectWide-band gap semiconductorsen_US
dc.subjectWorking temperaturesen_US
dc.subjectAtmospheric pressureen_US
dc.subjectAtmospheric temperatureen_US
dc.subjectCarrier concentrationen_US
dc.subjectElectron gasen_US
dc.subjectElectron mobilityen_US
dc.subjectElectronsen_US
dc.subjectEnergy gapen_US
dc.subjectGallium nitrideen_US
dc.subjectGalvanomagnetic effectsen_US
dc.subjectHall mobilityen_US
dc.subjectHigh electron mobility transistorsen_US
dc.subjectMagnetic fieldsen_US
dc.subjectOxide mineralsen_US
dc.subjectPhotolithographyen_US
dc.subjectQuartzen_US
dc.subjectReactive ion etchingen_US
dc.subjectScanningen_US
dc.subjectSecurity of dataen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.subjectSensorsen_US
dc.subjectSiliconen_US
dc.subjectSuperconducting materialsen_US
dc.subjectTransistorsen_US
dc.subjectTwo dimensional electron gasen_US
dc.subjectProbesen_US
dc.titleImaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 °cen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage1006en_US
dc.citation.epage1010en_US
dc.citation.volumeNumber27en_US
dc.citation.issueNumber2en_US
dc.identifier.doi10.1116/1.3056172en_US
dc.publisherAmerican Vacuum Societyen_US


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