Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 °c
Author
Akram, R.
Dede, M.
Oral, A.
Date
2009Source Title
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Print ISSN
1071-1023
Publisher
American Vacuum Society
Volume
27
Issue
2
Pages
1006 - 1010
Language
English
Type
ArticleItem Usage Stats
136
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90
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Abstract
The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures. A novel method of quartz tuning fork atomic force microscopy feedback has been used which provides extremely simple operation in atmospheric pressures, high-vacuum, and variable-temperature environments and enables very high magnetic and reasonable topographic resolution to be achieved simultaneously. Micro-Hall probes were produced using optical lithography and reactive ion etching process. The active area of all different types of Hall probes were 1×1 μ m2. Electrical and magnetic characteristics show Hall coefficient, carrier concentration, and series resistance of the hall sensors to be 10 mG, 6.3× 1012 cm-2, and 12 k at 25 °C and 7 mG, 8.9× 1012 cm-2 and 24 k at 125 °C for AlGaNGaN two-dimensional electron gas (2DEG), 0.281 mG, 2.2× 1014 cm-2, and 139 k at 25 °C and 0.418 mG, 1.5× 1014 cm-2 and 155 k at 100 °C for Si and 5-10 mG, 6.25× 1012 cm-2, and 12 k at 25 °C for pseudomorphic high electron mobility transistors (PHEMT) 2DEG Hall probe. Scan of magnetic field and topography of hard disc sample at variable temperatures using all three kinds of probes are presented. The best low noise image was achieved at temperatures of 25, 100, and 125 °C for PHEMT, Si, and AlGaNGaN Hall probes, respectively. This upper limit on the working temperature can be associated with their band gaps and noise associated with thermal activation of carriers at high temperatures.
Keywords
Active areasAlgan gan
Atomic forces
Band gaps
Comparative studies
Hall coefficients
Hall probe sensors
Hall probes
Hall sensors
Hard discs
High temperatures
High vacuums
Imaging capabilities
Low-noise images
Magnetic characteristics
Novel methods
Optical lithographies
Pseudomorphic high electron-mobility transistors
Quartz tuning forks
Reactive ions
Scanning Hall probe microscopies
Series resistances
Simple operations
Thermal activations
Two-dimensional electron gasses (2DEG)
Upper limits
Variable temperatures
Wide-band gap semiconductors
Working temperatures
Atmospheric pressure
Atmospheric temperature
Carrier concentration
Electron gas
Electron mobility
Electrons
Energy gap
Gallium nitride
Galvanomagnetic effects
Hall mobility
High electron mobility transistors
Magnetic fields
Oxide minerals
Photolithography
Quartz
Reactive ion etching
Scanning
Security of data
Semiconducting silicon compounds
Sensors
Silicon
Superconducting materials
Transistors
Two dimensional electron gas
Probes
Permalink
http://hdl.handle.net/11693/22774Published Version (Please cite this version)
https://doi.org/10.1116/1.3056172Collections
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