• About
  • Policies
  • What is openaccess
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 °c

      Thumbnail
      View / Download
      638.3 Kb
      Author
      Akram, R.
      Dede, M.
      Oral, A.
      Date
      2009
      Source Title
      Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
      Print ISSN
      1071-1023
      Publisher
      American Vacuum Society
      Volume
      27
      Issue
      2
      Pages
      1006 - 1010
      Language
      English
      Type
      Article
      Item Usage Stats
      136
      views
      90
      downloads
      Abstract
      The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures. A novel method of quartz tuning fork atomic force microscopy feedback has been used which provides extremely simple operation in atmospheric pressures, high-vacuum, and variable-temperature environments and enables very high magnetic and reasonable topographic resolution to be achieved simultaneously. Micro-Hall probes were produced using optical lithography and reactive ion etching process. The active area of all different types of Hall probes were 1×1 μ m2. Electrical and magnetic characteristics show Hall coefficient, carrier concentration, and series resistance of the hall sensors to be 10 mG, 6.3× 1012 cm-2, and 12 k at 25 °C and 7 mG, 8.9× 1012 cm-2 and 24 k at 125 °C for AlGaNGaN two-dimensional electron gas (2DEG), 0.281 mG, 2.2× 1014 cm-2, and 139 k at 25 °C and 0.418 mG, 1.5× 1014 cm-2 and 155 k at 100 °C for Si and 5-10 mG, 6.25× 1012 cm-2, and 12 k at 25 °C for pseudomorphic high electron mobility transistors (PHEMT) 2DEG Hall probe. Scan of magnetic field and topography of hard disc sample at variable temperatures using all three kinds of probes are presented. The best low noise image was achieved at temperatures of 25, 100, and 125 °C for PHEMT, Si, and AlGaNGaN Hall probes, respectively. This upper limit on the working temperature can be associated with their band gaps and noise associated with thermal activation of carriers at high temperatures.
      Keywords
      Active areas
      Algan gan
      Atomic forces
      Band gaps
      Comparative studies
      Hall coefficients
      Hall probe sensors
      Hall probes
      Hall sensors
      Hard discs
      High temperatures
      High vacuums
      Imaging capabilities
      Low-noise images
      Magnetic characteristics
      Novel methods
      Optical lithographies
      Pseudomorphic high electron-mobility transistors
      Quartz tuning forks
      Reactive ions
      Scanning Hall probe microscopies
      Series resistances
      Simple operations
      Thermal activations
      Two-dimensional electron gasses (2DEG)
      Upper limits
      Variable temperatures
      Wide-band gap semiconductors
      Working temperatures
      Atmospheric pressure
      Atmospheric temperature
      Carrier concentration
      Electron gas
      Electron mobility
      Electrons
      Energy gap
      Gallium nitride
      Galvanomagnetic effects
      Hall mobility
      High electron mobility transistors
      Magnetic fields
      Oxide minerals
      Photolithography
      Quartz
      Reactive ion etching
      Scanning
      Security of data
      Semiconducting silicon compounds
      Sensors
      Silicon
      Superconducting materials
      Transistors
      Two dimensional electron gas
      Probes
      Permalink
      http://hdl.handle.net/11693/22774
      Published Version (Please cite this version)
      https://doi.org/10.1116/1.3056172
      Collections
      • Department of Physics 2299
      Show full item record

      Related items

      Showing items related by title, author, creator and subject.

      • Thumbnail

        High sensitivity and multifunctional micro-Hall sensors fabricated using InAlSb/InAsSb/InAlSb heterostructures 

        Bando, M.; Ohashi, T.; Dede, M.; Akram, R.; Oral, A.; Park, S.Y.; Shibasaki I.; Handa H.; Sandhu, A. (2009)
        Further diversification of Hall sensor technology requires development of materials with high electron mobility and an ultrathin conducting layer very close to the material's surface. Here, we describe the magnetoresistive ...
      • Thumbnail

        Surface evolution of 4H-SiC(0001) during in-situ surface preparation and its influence on graphene properties 

        Ul Hassan J.; Meyer, A.; Çakmakyapan, Semih; Kazar, Özgür; Flege J.I.; Falta J.; Özbay, Ekmel; Janzén, E. (Trans Tech Publications, Switzerland, 2013)
        The evolution of SiC surface morphology during graphene growth process has been studied through the comparison of substrate surface step structure after in-situ etching and graphene growth in vacuum. Influence of in-situ ...
      • Thumbnail

        Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel 

        Gökden, S.; Tülek, R.; Teke, A.; Leach, J. H.; Fan, Q.; Xie, J.; Özgür, Ü.; Morkoç, H.; Lisesivdin, S. B.; Özbay, Ekmel (IOP Publishing, 2010-03-16)
        The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected ...

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartments

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 1771
      Copyright © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy