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dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorAltuntas, H.en_US
dc.contributor.authorYildiz, A.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorOzcelik, S.en_US
dc.date.accessioned2016-02-08T10:04:09Z
dc.date.available2016-02-08T10:04:09Z
dc.date.issued2009-03-17en_US
dc.identifier.issn0749-6036
dc.identifier.urihttp://hdl.handle.net/11693/22739
dc.description.abstractExperimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x=0.14) n-AlxGa1-xAs/GaAs heterostructures that were grown by molecular beam epitaxy (MBE). A 2-dimensional electron gas (2DEG) conduction channel and a bulk conduction channel were founded after implementing quantitative mobility spectrum analysis (QMSA) on the magnetic field dependent Hall data. An important decrease in 2DEG carrier density was observed with increasing temperature. The relationship between the bulk carriers and 2DEG carriers was investigated with 1D self consistent Schrödinger-Poisson simulations. The decrement in the 2DEG carrier density was related to the DX-center carrier trapping. With the simulation data that are not included in the effects of DX-centers, 17 meV of effective barrier height between AlGaAs/GaAs layers was found for high temperatures (T>300 K). With the QMSA extracted values that are influenced by DX-centers, 166 meV of the DX-center activation energy value were founded at the same temperatures.en_US
dc.language.isoEnglishen_US
dc.source.titleSuperlattices and Microstructuresen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.spmi.2009.02.009en_US
dc.subjectAlGaAs/GaAsen_US
dc.subjectDX-centeren_US
dc.subjectHall effecten_US
dc.subjectModulation dopeden_US
dc.subjectQMSAen_US
dc.titleDX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al contenten_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.citation.spage604en_US
dc.citation.epage611en_US
dc.citation.volumeNumber45en_US
dc.citation.issueNumber6en_US
dc.identifier.doi10.1016/j.spmi.2009.02.009en_US
dc.publisherELSEVIERen_US
dc.contributor.bilkentauthorÖzbay, Ekmel


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