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      Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition

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      Author(s)
      Alevli, M.
      Gungor, N.
      Alkis, S.
      Ozgit Akgun, C.
      Donmez, I.
      Okyay, Ali Kemal
      Gamage, S.
      Senevirathna, I.
      Dietz, N.
      Bıyıklı, Necmi
      Date
      2015
      Source Title
      Physica Status Solidi. C: Current Topics in Solid State Physics
      Print ISSN
      1862-6351
      Publisher
      Wiley - V C H Verlag GmbH & Co. KGaA
      Volume
      12
      Issue
      4-5
      Pages
      423 - 429
      Language
      English
      Type
      Article
      Item Usage Stats
      214
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      197
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      Abstract
      The influences of reactor pressure on the stoichiometry, free carrier concentration, IR and Hall determined mobility, effective optical band edge, and optical phonon modes of HPCVD grown InN films have been analysed and are reported. The In 3d, and N 1s XPS spectra results revealed In-N and N-In bonding states as well as small concentrations of In-O and N-O bonds, respectively in all samples. InN layers grown at 1 bar were found to contain metallic indium, suggesting that the incorporation of nitrogen into the InN crystal structure was not efficient. The free carrier concentrations, as determined by Hall measurements, were found to decrease with increasing reactor pressure from 1.61×1021 to 8.87×1019 cm-3 and the room-temperature Hall mobility increased with reactor pressure from 21.01 to 155.18 cm2/Vs at 1 and 15 bar reactor pressures, respectively. IR reflectance spectra of all three (1, 8, and 15 bar) InN samples were modelled assuming two distinct layers of InN, having different free carrier concentration, IR mobility, and effective dielectric function values, related to a nucleation/interfacial region at the InN/sapphire, followed by a bulk InN layer. The effective optical band gap has been found to decrease from 1.19 to 0.95 eV with increasing reactor pressure. Improvement of the local structural quality with increasing reactor pressure has been further confirmed by Raman spectroscopy measurements. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
      Keywords
      FTIR
      Hall measurements
      High-pressure CVD
      Indium nitride
      MOCVD
      Superatmospheric
      XPS
      Carrier mobility
      Chemical bonds
      Chemical vapor deposition
      Crystal structure
      Energy gap
      Fourier transform infrared spectroscopy
      Hall mobility
      High pressure effects
      Indium
      Metallorganic chemical vapor deposition
      X ray photoelectron spectroscopy
      FTIR
      High pressure
      Carrier concentration
      Permalink
      http://hdl.handle.net/11693/22736
      Published Version (Please cite this version)
      http://dx.doi.org/10.1002/pssc.201400171
      Collections
      • Department of Electrical and Electronics Engineering 3868
      • Institute of Materials Science and Nanotechnology (UNAM) 2098
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