Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields
Author
Sari, E.
Nizamoglu, S.
Lee, I. H.
Baek, J. H.
Demir, Hilmi Volkan
Date
2009-05-29Source Title
Applied Physics Letters
Print ISSN
0003-6951
Publisher
American Institute of Physics
Volume
94
Issue
21
Pages
211107-1 - 211107-3
Language
English
Type
ArticleItem Usage Stats
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Abstract
Electric field dependent photoluminescence decay kinetics and its radiative component are studied in polar InGaN/GaN quantum heterostructures at low fields. Under externally applied electric field lower than polarization fields, spectrally and time resolved photoluminescence measurements are taken to retrieve internal quantum efficiencies and carrier lifetimes as a function of the applied field. Subsequently, relative behavior of radiative recombination lifetimes is obtained in response to the applied field. In these characterizations of polar InGaN/GaN structures, we observe that both the carrier lifetime and the radiative recombination lifetime decrease with increasing external electric field, with the radiative component exhibiting weaker field dependence.
Keywords
Applied electric fieldApplied field
External electric field
Field dependence
InGaN/GaN
Internal quantum efficiency
Low field
Photoluminescence decay
Polarization field
Quantum heterostructures
Radiative decay
Radiative recombination
Time-resolved photoluminescence
Carrier lifetime
Crystals
Electric field measurement
Photoluminescence
Electric fields
Permalink
http://hdl.handle.net/11693/22724Published Version (Please cite this version)
http://dx.doi.org/10.1063/1.3142386Collections
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