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      Two-and one-dimensional honeycomb structures of silicon and germanium

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      Author
      Cahangirov, S.
      Topsakal, M.
      Aktürk, E.
      Şahin, H.
      Çıracı, Salim
      Date
      2009
      Source Title
      Physical Review Letters
      Print ISSN
      1079-7114
      Publisher
      American Physical Society
      Volume
      102
      Issue
      23
      Pages
      236804-1 - 236804-4
      Language
      English
      Type
      Article
      Item Usage Stats
      179
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      163
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      Abstract
      First-principles calculations of structure optimization, phonon modes, and finite temperature molecular dynamics predict that silicon and germanium can have stable, two-dimensional, low-buckled, honeycomb structures. Similar to graphene, these puckered structures are ambipolar and their charge carriers can behave like a massless Dirac fermion due to their π and π* bands which are crossed linearly at the Fermi level. In addition to these fundamental properties, bare and hydrogen passivated nanoribbons of Si and Ge show remarkable electronic and magnetic properties, which are size and orientation dependent. These properties offer interesting alternatives for the engineering of diverse nanodevices.
      Keywords
      Ambipolar
      Dirac fermions
      Electronic and magnetic properties
      Finite temperatures
      First-principles calculation
      Fundamental properties
      Graphene
      Nano-devices
      Nanoribbons
      Orientation dependent
      Phonon mode
      Structure optimization
      Dynamics
      Fermions
      Germanium
      Honeycomb structures
      Hydrogen
      Magnetic properties
      Molecular dynamics
      Passivation
      Structural optimization
      Permalink
      http://hdl.handle.net/11693/22723
      Published Version (Please cite this version)
      http://dx.doi.org/10.1103/PhysRevLett.102.236804
      Collections
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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