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dc.contributor.authorYilmaz, D. E.en_US
dc.contributor.authorBulutay, C.en_US
dc.contributor.authorÇaǧın, T.en_US
dc.date.accessioned2016-02-08T10:03:54Z
dc.date.available2016-02-08T10:03:54Z
dc.date.issued2009en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/22720
dc.description.abstractStrain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 2-3 Å distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3138163en_US
dc.subjectAmorphous silicon dioxideen_US
dc.subjectMatrixen_US
dc.subjectNanocrystal surfaceen_US
dc.subjectNonuniformen_US
dc.subjectOptical and electronic propertiesen_US
dc.subjectSilicon nanocrystalsen_US
dc.subjectStrain analysisen_US
dc.subjectStrain distributionsen_US
dc.subjectStrain fieldsen_US
dc.subjectStrain profilesen_US
dc.subjectVolumetric strainen_US
dc.subjectElectronic propertiesen_US
dc.subjectNanocrystalsen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectSilicaen_US
dc.subjectAmorphous siliconen_US
dc.titleAnalysis of strain fields in silicon nanocrystalsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage191914-1en_US
dc.citation.epage191914-3en_US
dc.citation.volumeNumber94en_US
dc.citation.issueNumber19en_US
dc.identifier.doi10.1063/1.3138163en_US
dc.publisherAmerican Institute of Physicsen_US


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