Analysis of strain fields in silicon nanocrystals
Author
Yilmaz, D. E.
Bulutay, C.
Çaǧın, T.
Date
2009Source Title
Applied Physics Letters
Print ISSN
0003-6951
Publisher
American Institute of Physics
Volume
94
Issue
19
Pages
191914-1 - 191914-3
Language
English
Type
ArticleItem Usage Stats
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Abstract
Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 2-3 Å distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis.
Keywords
Amorphous silicon dioxideMatrix
Nanocrystal surface
Nonuniform
Optical and electronic properties
Silicon nanocrystals
Strain analysis
Strain distributions
Strain fields
Strain profiles
Volumetric strain
Electronic properties
Nanocrystals
Semiconductor quantum dots
Silica
Amorphous silicon
Permalink
http://hdl.handle.net/11693/22720Published Version (Please cite this version)
http://dx.doi.org/10.1063/1.3138163Collections
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