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      Analysis of strain fields in silicon nanocrystals

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      Author
      Yilmaz, D. E.
      Bulutay, C.
      Çaǧın, T.
      Date
      2009
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      American Institute of Physics
      Volume
      94
      Issue
      19
      Pages
      191914-1 - 191914-3
      Language
      English
      Type
      Article
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      Abstract
      Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 2-3 Å distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis.
      Keywords
      Amorphous silicon dioxide
      Matrix
      Nanocrystal surface
      Nonuniform
      Optical and electronic properties
      Silicon nanocrystals
      Strain analysis
      Strain distributions
      Strain fields
      Strain profiles
      Volumetric strain
      Electronic properties
      Nanocrystals
      Semiconductor quantum dots
      Silica
      Amorphous silicon
      Permalink
      http://hdl.handle.net/11693/22720
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.3138163
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      • Department of Physics 2299
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