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      High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration

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      Author
      Yu, H.-Y.
      Ren, S.
      Jung, W. S.
      Okyay, Ali Kemal
      Miller, D. A. B.
      Saraswat, K. C.
      Date
      2009
      Source Title
      IEEE Electron Device Letters
      Print ISSN
      0741-3106
      Electronic ISSN
      1558-0563
      Publisher
      Institute of Electrical and Electronics Engineers
      Volume
      30
      Issue
      11
      Pages
      1161 - 1163
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications. © 2009 IEEE.
      Keywords
      Germanium
      Photodiode
      Selective
      Strain
      Tensile
      Permalink
      http://hdl.handle.net/11693/22596
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/LED.2009.2030905
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      • Department of Electrical and Electronics Engineering 3524
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