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dc.contributor.authorZhang, Z-H.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorJi Y.en_US
dc.contributor.authorWang, L.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2016-02-08T10:00:50Z
dc.date.available2016-02-08T10:00:50Z
dc.date.issued2015en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/22492
dc.description.abstractThe low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332meV to ∼294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4908118en_US
dc.subjectCharge injectionen_US
dc.subjectElectric fieldsen_US
dc.subjectElectron injectionen_US
dc.subjectGallium nitrideen_US
dc.subjectHeterojunction bipolar transistorsen_US
dc.subjectHole concentrationen_US
dc.subjectLight modulatorsen_US
dc.subjectModulatorsen_US
dc.subjectSemiconducting indium compoundsen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectActive regionsen_US
dc.subjectBuilt - in electric fieldsen_US
dc.subjectElectron blocking layeren_US
dc.subjectImproved hole injectionen_US
dc.subjectIngan/gan ledsen_US
dc.subjectIngan/gan lightemitting diodes (LEDs)en_US
dc.subjectOptical performanceen_US
dc.subjectValance band barriersen_US
dc.subjectLight emitting diodesen_US
dc.titleA hole modulator for InGaN/GaN light-emitting diodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentUNAM - Institute of Materials Science and Nanotechnology
dc.departmentDepartment of Physics
dc.citation.spage063501-1en_US
dc.citation.epage063501-5en_US
dc.citation.volumeNumber106en_US
dc.citation.issueNumber6en_US
dc.identifier.doi10.1063/1.4908118en_US
dc.publisherAmerican Institute of Physicsen_US
dc.contributor.bilkentauthorDemir, Hilmi Volkanen_US
dc.identifier.eissn1077-3118


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