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      A hole modulator for InGaN/GaN light-emitting diodes

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      Author
      Zhang, Z-H.
      Kyaw, Z.
      Liu W.
      Ji Y.
      Wang, L.
      Tan S.T.
      Sun, X. W.
      Demir, Hilmi Volkan
      Date
      2015
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Electronic ISSN
      1077-3118
      Publisher
      American Institute of Physics
      Volume
      106
      Issue
      6
      Pages
      063501-1 - 063501-5
      Language
      English
      Type
      Article
      Item Usage Stats
      232
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      131
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      Abstract
      The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332meV to ∼294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.
      Keywords
      Charge injection
      Electric fields
      Electron injection
      Gallium nitride
      Heterojunction bipolar transistors
      Hole concentration
      Light modulators
      Modulators
      Semiconducting indium compounds
      Semiconductor quantum wells
      Active regions
      Built - in electric fields
      Electron blocking layer
      Improved hole injection
      Ingan/gan leds
      Ingan/gan lightemitting diodes (LEDs)
      Optical performance
      Valance band barriers
      Light emitting diodes
      Permalink
      http://hdl.handle.net/11693/22492
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4908118
      Collections
      • Department of Electrical and Electronics Engineering 3614
      • Department of Physics 2352
      • Institute of Materials Science and Nanotechnology (UNAM) 1863
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