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      Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction

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      Author
      Öztürk, M. K.
      Hongbo, Y.
      SarIkavak, B.
      Korçak, S.
      Özçelik, S.
      Özbay, Ekmel
      Date
      2009-04-18
      Source Title
      Journal of Materials Science: Materials in Electronics
      Print ISSN
      0957-4522
      Publisher
      Springer
      Volume
      21
      Issue
      2
      Pages
      185 - 191
      Language
      English
      Type
      Article
      Item Usage Stats
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      118
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      Abstract
      The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are determined by using nondestructive high-resolution X-ray diffraction in detail. The distorted GaN layers were described as mosaic crystals characterized by vertical and lateral coherence lengths, a mean tilt, twist, screw and edge type threading dislocation densities. The rocking curves of symmetric (00.l) reflections were used to determine the tilt angle, while the twist angle was an extrapolated grown ω-scan for an asymmetric (hk.l) Bragg reflection with an h or k nonzero. Moreover, it is an important result that the mosaic structure was analyzed from a different (10.l) crystal direction that was the angular inclined plane to the z-axis. The mosaic structure parameters were obtained in an approximately defined ratio depending on the inclination or polar angle of the sample.
      Keywords
      Bragg reflection
      Coherence lengths
      Crystal direction
      GaN layers
      Hexagonal GaN
      High resolution X ray diffraction
      Inclined planes
      InGaN/GaN
      InGaN/GaN multi-quantum well
      Metalorganic chemical vapor deposition
      Mosaic crystals
      Mosaic structure
      Non destructive
      Polar angles
      Rocking curves
      Structural characteristics
      Threading dislocation densities
      Tilt angle
      Twist angles
      Edge dislocations
      Gallium alloys
      Gallium nitride
      Laser optics
      Light
      Light emitting diodes
      Machinery
      Physical optics
      Screw dislocations
      Semiconductor quantum wells
      Structural analysis
      X ray diffraction
      X ray diffraction analysis
      Permalink
      http://hdl.handle.net/11693/22452
      Published Version (Please cite this version)
      http://dx.doi.org/10.1007/s10854-009-9891-6
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Nanotechnology Research Center (NANOTAM) 1006
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