Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction
Author
Öztürk, M. K.
Hongbo, Y.
SarIkavak, B.
Korçak, S.
Özçelik, S.
Özbay, Ekmel
Date
2009-04-18Source Title
Journal of Materials Science: Materials in Electronics
Print ISSN
0957-4522
Publisher
Springer
Volume
21
Issue
2
Pages
185 - 191
Language
English
Type
ArticleItem Usage Stats
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Abstract
The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are determined by using nondestructive high-resolution X-ray diffraction in detail. The distorted GaN layers were described as mosaic crystals characterized by vertical and lateral coherence lengths, a mean tilt, twist, screw and edge type threading dislocation densities. The rocking curves of symmetric (00.l) reflections were used to determine the tilt angle, while the twist angle was an extrapolated grown ω-scan for an asymmetric (hk.l) Bragg reflection with an h or k nonzero. Moreover, it is an important result that the mosaic structure was analyzed from a different (10.l) crystal direction that was the angular inclined plane to the z-axis. The mosaic structure parameters were obtained in an approximately defined ratio depending on the inclination or polar angle of the sample.
Keywords
Bragg reflectionCoherence lengths
Crystal direction
GaN layers
Hexagonal GaN
High resolution X ray diffraction
Inclined planes
InGaN/GaN
InGaN/GaN multi-quantum well
Metalorganic chemical vapor deposition
Mosaic crystals
Mosaic structure
Non destructive
Polar angles
Rocking curves
Structural characteristics
Threading dislocation densities
Tilt angle
Twist angles
Edge dislocations
Gallium alloys
Gallium nitride
Laser optics
Light
Light emitting diodes
Machinery
Physical optics
Screw dislocations
Semiconductor quantum wells
Structural analysis
X ray diffraction
X ray diffraction analysis