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dc.contributor.authorYildiz, A.en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorBalkan, N.en_US
dc.date.accessioned2016-02-08T09:59:37Z
dc.date.available2016-02-08T09:59:37Z
dc.date.issued2009-12-03en_US
dc.identifier.issn0947-8396
dc.identifier.urihttp://hdl.handle.net/11693/22401
dc.description.abstractThe electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities of the bulk GaN layers are extracted from Hall measurements with implementing simple parallel conduction extraction method (SPCEM). It is observed that the resistivity (ρ) increases with decreasing carrier density in the insulating side of the metal-insulator transition for highly resistive GaN layers. Then the conduction mechanism of highly resistive GaN layers changes from an activated conduction to variable range hopping conduction (VRH). In the studied temperature range, ln∈(ρ) is proportional to T -1/4 for the insulating sample and proportional to T -1/2 for the more highly insulating sample, indicating that the transport mechanism is due to VRH.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics A: Materials Science and Processingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s00339-009-5507-5en_US
dc.subjectCarrier densityen_US
dc.subjectConduction Mechanismen_US
dc.subjectElectrical conduction mechanismsen_US
dc.subjectExtraction methoden_US
dc.subjectGaN layersen_US
dc.subjectHall measurementsen_US
dc.subjectHeterostructuresen_US
dc.subjectLow temperaturesen_US
dc.subjectParallel conductionen_US
dc.subjectTemperature rangeen_US
dc.subjectTemperature-dependent conductivityen_US
dc.subjectTransport mechanismen_US
dc.subjectVariable-range-hopping conductionsen_US
dc.subjectGallium alloysen_US
dc.subjectInsulationen_US
dc.subjectMetal insulator boundariesen_US
dc.subjectMetal insulator transitionen_US
dc.subjectMetal recoveryen_US
dc.subjectSemiconductor insulator boundariesen_US
dc.subjectSmeltingen_US
dc.subjectGallium nitrideen_US
dc.titleInvestigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Methoden_US
dc.typeArticleen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage557en_US
dc.citation.epage563en_US
dc.citation.volumeNumber98en_US
dc.citation.issueNumber3en_US
dc.identifier.doi10.1007/s00339-009-5507-5en_US
dc.publisherSpringeren_US
dc.contributor.bilkentauthorÖzbay, Ekmelen_US


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