Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
Lisesivdin, S. B.
Applied Physics A: Materials Science and Processing
557 - 563
Item Usage Stats
The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities of the bulk GaN layers are extracted from Hall measurements with implementing simple parallel conduction extraction method (SPCEM). It is observed that the resistivity (ρ) increases with decreasing carrier density in the insulating side of the metal-insulator transition for highly resistive GaN layers. Then the conduction mechanism of highly resistive GaN layers changes from an activated conduction to variable range hopping conduction (VRH). In the studied temperature range, ln∈(ρ) is proportional to T -1/4 for the insulating sample and proportional to T -1/2 for the more highly insulating sample, indicating that the transport mechanism is due to VRH.
Electrical conduction mechanisms
Metal insulator boundaries
Metal insulator transition
Semiconductor insulator boundaries
Published Version (Please cite this version)http://dx.doi.org/10.1007/s00339-009-5507-5
Showing items related by title, author, creator and subject.
Yildiz, A.; Lisesivdin, S.B.; Kasap, M.; Mardare, D. (2010)Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates. The relationship between the substrate temperature and the electrical properties of the films was investigated. Electrical ...
Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S. (2009)The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at ...
Alkan, F.; Salzner, U. (2008)Electron-hole symmetry upon p- and n-doping of conducting organic polymers is rationalized with Hückel theory by the presence of symmetrically located intragap states. Since density functional theory (DFT) predicts very ...