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      Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

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      Author
      Yildiz, A.
      Lisesivdin, S. B.
      Kasap, M.
      Ozcelik, S.
      Özbay, Ekmel
      Balkan, N.
      Date
      2009-12-03
      Source Title
      Applied Physics A: Materials Science and Processing
      Print ISSN
      0947-8396
      Publisher
      Springer
      Volume
      98
      Issue
      3
      Pages
      557 - 563
      Language
      English
      Type
      Article
      Item Usage Stats
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      106
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      Abstract
      The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities of the bulk GaN layers are extracted from Hall measurements with implementing simple parallel conduction extraction method (SPCEM). It is observed that the resistivity (ρ) increases with decreasing carrier density in the insulating side of the metal-insulator transition for highly resistive GaN layers. Then the conduction mechanism of highly resistive GaN layers changes from an activated conduction to variable range hopping conduction (VRH). In the studied temperature range, ln∈(ρ) is proportional to T -1/4 for the insulating sample and proportional to T -1/2 for the more highly insulating sample, indicating that the transport mechanism is due to VRH.
      Keywords
      Carrier density
      Conduction Mechanism
      Electrical conduction mechanisms
      Extraction method
      GaN layers
      Hall measurements
      Heterostructures
      Low temperatures
      Parallel conduction
      Temperature range
      Temperature-dependent conductivity
      Transport mechanism
      Variable-range-hopping conductions
      Gallium alloys
      Insulation
      Metal insulator boundaries
      Metal insulator transition
      Metal recovery
      Semiconductor insulator boundaries
      Smelting
      Gallium nitride
      Permalink
      http://hdl.handle.net/11693/22401
      Published Version (Please cite this version)
      http://dx.doi.org/10.1007/s00339-009-5507-5
      Collections
      • Department of Electrical and Electronics Engineering 3597
      • Department of Physics 2329
      • Nanotechnology Research Center (NANOTAM) 1026
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