Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
Author
Yildiz, A.
Lisesivdin, S. B.
Kasap, M.
Ozcelik, S.
Özbay, Ekmel
Balkan, N.
Date
2009-12-03Source Title
Applied Physics A: Materials Science and Processing
Print ISSN
0947-8396
Publisher
Springer
Volume
98
Issue
3
Pages
557 - 563
Language
English
Type
ArticleItem Usage Stats
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Abstract
The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities of the bulk GaN layers are extracted from Hall measurements with implementing simple parallel conduction extraction method (SPCEM). It is observed that the resistivity (ρ) increases with decreasing carrier density in the insulating side of the metal-insulator transition for highly resistive GaN layers. Then the conduction mechanism of highly resistive GaN layers changes from an activated conduction to variable range hopping conduction (VRH). In the studied temperature range, ln∈(ρ) is proportional to T -1/4 for the insulating sample and proportional to T -1/2 for the more highly insulating sample, indicating that the transport mechanism is due to VRH.
Keywords
Carrier densityConduction Mechanism
Electrical conduction mechanisms
Extraction method
GaN layers
Hall measurements
Heterostructures
Low temperatures
Parallel conduction
Temperature range
Temperature-dependent conductivity
Transport mechanism
Variable-range-hopping conductions
Gallium alloys
Insulation
Metal insulator boundaries
Metal insulator transition
Metal recovery
Semiconductor insulator boundaries
Smelting
Gallium nitride
Permalink
http://hdl.handle.net/11693/22401Published Version (Please cite this version)
http://dx.doi.org/10.1007/s00339-009-5507-5Collections
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