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dc.contributor.authorBulutay, C.en_US
dc.contributor.authorKulakci, M.en_US
dc.contributor.authorTuran, R.en_US
dc.date.accessioned2016-02-08T09:59:24Z
dc.date.available2016-02-08T09:59:24Z
dc.date.issued2010en_US
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/11693/22385
dc.description.abstractDemonstrating the quantum-confined Stark effect (QCSE) in silicon nanocrystals (NCs) embedded in oxide has been rather elusive, unlike the other materials. Here, the recent experimental data from ion-implanted Si NCs is unambiguously explained within the context of QCSE using an atomistic pseudopotential theory. This further reveals that the majority of the Stark shift comes from the valence states which undergo a level crossing that leads to a nonmonotonic radiative recombination behavior with respect to the applied field. The polarizability of embedded Si NCs including the excitonic effects is extracted over a diameter range of 2.5-6.5 nm, which displays a cubic scaling, α=cDNC 3, with c=2.436× 10-11 C/(V m), where DNC is the NC diameter. Finally, based on intraband electroabsorption analysis, it is predicted that p -doped Si NCs will show substantial voltage tunability, whereas n -doped samples should be almost insensitive. Given the fact that bulk silicon lacks the linear electro-optic effect as being a centrosymmetric crystal, this may offer a viable alternative for electrical modulation using p -doped Si NCs.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysical Review B - Condensed Matter and Materials Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.81.125333en_US
dc.titleStark effect, polarizability, and electroabsorption in silicon nanocrystalsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage125333-1en_US
dc.citation.epage125333-7en_US
dc.citation.volumeNumber81en_US
dc.citation.issueNumber12en_US
dc.identifier.doi10.1103/PhysRevB.81.125333en_US
dc.publisherThe American Physical Societyen_US


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