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dc.contributor.authorGhobadi, A.en_US
dc.contributor.authorYavuz, H. I.en_US
dc.contributor.authorUlusoy, T. G.en_US
dc.contributor.authorIcli, K. C.en_US
dc.contributor.authorOzenbas, M.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2016-02-08T09:59:21Z
dc.date.available2016-02-08T09:59:21Z
dc.date.issued2015en_US
dc.identifier.issn0013-4686
dc.identifier.urihttp://hdl.handle.net/11693/22381
dc.description.abstractIn this paper, the effect of angstrom-thick atomic layer deposited (ALD) ZnO embedded layer on photovoltaic (PV) performance of Nanowire-Based All-TiO2 solar cells has been systematically investigated. Our results indicate that by varying the thickness of ZnO layer the efficiency of the solar cell can be significantly changed. It is shown that the efficiency has its maximum for optimal thickness of 1 ALD cycle in which this ultrathin ZnO layer improves device performance through passivation of surface traps without hampering injection efficiency of photogenerated electrons. The mechanisms contributing to this unprecedented change in PV performance of the cell have been scrutinized and discussed.en_US
dc.language.isoEnglishen_US
dc.source.titleElectrochimica Actaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.electacta.2015.01.079en_US
dc.subjectphotoelectrochemicalen_US
dc.subjectphotovoltaicen_US
dc.subjectsolar cellsen_US
dc.subjecttitanium dioxideen_US
dc.subjectAtomsen_US
dc.subjectCell engineeringen_US
dc.subjectEfficiencyen_US
dc.subjectNanowiresen_US
dc.subjectSolar power generationen_US
dc.subjectZinc oxideen_US
dc.subjectAtomic layer depositeden_US
dc.subjectDevice performanceen_US
dc.subjectInjection efficiencyen_US
dc.subjectInterface engineeringen_US
dc.subjectOptimal thicknessen_US
dc.subjectPhotogenerated electronsen_US
dc.subjectPhotovoltaicen_US
dc.subjectAtomic layer depositionen_US
dc.titleEnhanced Performance of Nanowire-Based All-TiO2 Solar Cells using Subnanometer-Thick Atomic Layer Deposited ZnO Embedded Layeren_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.citation.spage23en_US
dc.citation.epage30en_US
dc.citation.volumeNumber157en_US
dc.identifier.doi10.1016/j.electacta.2015.01.079en_US
dc.publisherPergamon Pressen_US
dc.contributor.bilkentauthorOkyay, Ali Kemal


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