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      Analysis of defect related optical transitions in biased AlGaN/GaN heterostructures

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      Author
      Bengi, A.
      Lisesivdin, S.B.
      Kasap, M.
      Mammadov, T.
      Ozcelik, S.
      Özbay, Ekmel
      Date
      2010
      Source Title
      Materials Science in Semiconductor Processing
      Print ISSN
      13698001
      Volume
      13
      Issue
      2
      Pages
      105 - 108
      Language
      English
      Type
      Article
      Item Usage Stats
      128
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      108
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      Abstract
      The optical transitions in AlGaN/GaN heterostructures that are grown by metalorganic chemical vapor deposition (MOCVD) have been investigated in detail by using Hall and room temperature (RT) photoluminescence (PL) measurements. The Hall measurements show that there is two-dimensional electron gas (2DEG) conduction at the AlGaN/GaN heterointerface. PL measurements show that in addition to the characteristic near-band edge (BE) transition, there are blue (BL) and yellow luminescence (YL) bands, free-exciton transition (FE), and a neighboring emission band (NEB). To analyze these transitions in detail, the PL measurements were taken under bias where the applied electric field changed from 0 to 50 V/cm. Due to the applied electric field, band bending occurs and NEB separates into two different peaks as an ultraviolet luminescence (UVL) and Y4 band. Among these bands, only the yellow band is unaffected with the applied electric field. The luminescence intensity change of these bands with an electric field is investigated in detail. As a result, the most probable candidate of the intensity decrease with an increasing electric field is the reduction in the radiative lifetime. © 2010 Elsevier Ltd. All rights reserved.
      Keywords
      2DEG
      AlGaN/GaN
      MOCVD
      Photoluminescence
      Under bias
      AlGaN/GaN
      AlGaN/GaN heterostructures
      Applied electric field
      Bandbending
      Emission bands
      Exciton transitions
      Hall measurements
      Hetero interfaces
      Luminescence intensity
      Metalorganic chemical vapor deposition
      MOCVD
      Near band edge
      Photoluminescence measurements
      PL measurements
      Radiative lifetime
      Room temperature
      Two-dimensional electron gas (2DEG)
      Ultraviolet luminescence
      Yellow bands
      Yellow luminescence bands
      Crystals
      Electric field measurement
      Electric fields
      Electron gas
      Metallorganic chemical vapor deposition
      Optical transitions
      Photoluminescence
      Two dimensional electron gas
      Gallium nitride
      Permalink
      http://hdl.handle.net/11693/22374
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/j.mssp.2010.05.004
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