Effects of silicon and germanium adsorbed on graphene
Date
2010Source Title
Applied Physics Letters
Print ISSN
1077-3118
Publisher
A I P Publishing LLC
Volume
96
Issue
12
Language
English
Type
ArticleItem Usage Stats
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Abstract
Based on the first-principles plane wave calculations, we studied the adsorption of Si and Geon graphene. We found that these atoms are bound to graphene at the bridge site with a significant binding energy, while many other atoms are bound at the hollow site above the center of hexagon. It is remarkable that these adatoms may induce important changes in the electronic structure of graphene even at low coverage. Semimetallic graphene becomes metallized and attains a magnetic moment. The combination of adatom orbitals with those of ππ- and π∗π∗-states of bare graphene is found responsible for these effects.
Keywords
Bridge sitesFirst-principles
Hollow sites
Orbitals
Plane wave calculations
Adatoms
Adsorption
Binding energy
Electronic structure
Germanium
Graphite
Magnetic moments
Graphene