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      Effects of silicon and germanium adsorbed on graphene

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      Author(s)
      Aktürk, E.
      Ataca, C.
      Çıracı, Salim
      Date
      2010
      Source Title
      Applied Physics Letters
      Print ISSN
      1077-3118
      Publisher
      A I P Publishing LLC
      Volume
      96
      Issue
      12
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Based on the first-principles plane wave calculations, we studied the adsorption of Si and Geon graphene. We found that these atoms are bound to graphene at the bridge site with a significant binding energy, while many other atoms are bound at the hollow site above the center of hexagon. It is remarkable that these adatoms may induce important changes in the electronic structure of graphene even at low coverage. Semimetallic graphene becomes metallized and attains a magnetic moment. The combination of adatom orbitals with those of ππ- and π∗π∗-states of bare graphene is found responsible for these effects.
      Keywords
      Bridge sites
      First-principles
      Hollow sites
      Orbitals
      Plane wave calculations
      Adatoms
      Adsorption
      Binding energy
      Electronic structure
      Germanium
      Graphite
      Magnetic moments
      Graphene
      Permalink
      http://hdl.handle.net/11693/22356
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.3368704
      Collections
      • Department of Physics 2397
      • Institute of Materials Science and Nanotechnology (UNAM) 1930
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