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dc.contributor.authorGökden, S.en_US
dc.contributor.authorTülek, R.en_US
dc.contributor.authorTeke, A.en_US
dc.contributor.authorLeach, J. H.en_US
dc.contributor.authorFan, Q.en_US
dc.contributor.authorXie, J.en_US
dc.contributor.authorÖzgür, Ü.en_US
dc.contributor.authorMorkoç, H.en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:58:58Z
dc.date.available2016-02-08T09:58:58Z
dc.date.issued2010-03-16en_US
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/22350
dc.description.abstractThe scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected that InGaN will lead to relatively higher electron mobilities than GaN, Hall mobilities were measured to be much lower for samples with InGaN channels as compared to GaN. To investigate these observations the major scattering processes including acoustic and optical phonons, ionized impurity, interface roughness, dislocation and alloy disorder were applied to the temperature-dependent mobility data. It was found that scattering due mainly to interface roughness limits the electron mobility at low and intermediate temperatures for samples having InGaN channels. The room temperature electron mobilities which were determined by a combination of both optical phonon and interface roughness scattering were measured between 630 and 910 cm2 (V s)-1 with corresponding sheet carrier densities of 2.3-1.3 × 1013 cm-2. On the other hand, electron mobilities were mainly limited by intrinsic scattering processes such as acoustic and optical phonons over the whole temperature range for Al0.82In 0.18N/AlN/GaN and Al0.3Ga0.7N/AlN/GaN heterostructures where the room temperature electron mobilities were found to be 1630 and 1573 cm2 (V s)-1 with corresponding sheet carrier densities of 1.3 and 1.1 × 1013 cm-2, respectively. By these analyses, it could be concluded that the interfaces of HEMT structures with the InGaN channel layer are not as good as that of a conventional GaN channel where either AlGaN or AlInN barriers are used. It could also be pointed out that as the In content in the AlInN barrier layer increases the interface becomes smoother resulted in higher electron mobility.en_US
dc.language.isoEnglishen_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0268-1242/25/4/045024en_US
dc.subjectAlGaNen_US
dc.subjectAlloy disorderen_US
dc.subjectBarrier layersen_US
dc.subjectChannel layersen_US
dc.subjectHeterostructuresen_US
dc.subjectInterface roughnessen_US
dc.subjectInterface roughness scatteringen_US
dc.subjectIntermediate temperaturesen_US
dc.subjectIntrinsic scatteringen_US
dc.subjectIonized impuritiesen_US
dc.subjectOptical phononsen_US
dc.subjectRoom temperatureen_US
dc.subjectScattering mechanismsen_US
dc.subjectScattering processen_US
dc.subjectSheet carrier densitiesen_US
dc.subjectTemperature dependenten_US
dc.subjectTemperature rangeen_US
dc.subjectTwo-dimensional electron gas (2DEG)en_US
dc.subjectCarrier concentrationen_US
dc.subjectElectron gasen_US
dc.subjectElectron mobilityen_US
dc.subjectElectronsen_US
dc.subjectGallium alloysen_US
dc.subjectGallium nitrideen_US
dc.subjectHall effecten_US
dc.subjectHigh electron mobility transistorsen_US
dc.subjectInterfaces (materials)en_US
dc.subjectIonization of gasesen_US
dc.subjectMagnetic field effectsen_US
dc.subjectPhononsen_US
dc.subjectSingle crystalsen_US
dc.subjectTwo dimensionalen_US
dc.subjectTwo dimensional electron gasen_US
dc.subjectAcoustic wave scatteringen_US
dc.titleMobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channelen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.citation.volumeNumber25en_US
dc.citation.issueNumber4en_US
dc.identifier.doi10.1088/0268-1242/25/4/045024en_US
dc.publisherIOP Publishingen_US
dc.contributor.bilkentauthorÖzbay, Ekmelen_US


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