Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel
Leach, J. H.
Lisesivdin, S. B.
Semiconductor Science and Technology
Item Usage Stats
MetadataShow full item record
The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected that InGaN will lead to relatively higher electron mobilities than GaN, Hall mobilities were measured to be much lower for samples with InGaN channels as compared to GaN. To investigate these observations the major scattering processes including acoustic and optical phonons, ionized impurity, interface roughness, dislocation and alloy disorder were applied to the temperature-dependent mobility data. It was found that scattering due mainly to interface roughness limits the electron mobility at low and intermediate temperatures for samples having InGaN channels. The room temperature electron mobilities which were determined by a combination of both optical phonon and interface roughness scattering were measured between 630 and 910 cm2 (V s)-1 with corresponding sheet carrier densities of 2.3-1.3 × 1013 cm-2. On the other hand, electron mobilities were mainly limited by intrinsic scattering processes such as acoustic and optical phonons over the whole temperature range for Al0.82In 0.18N/AlN/GaN and Al0.3Ga0.7N/AlN/GaN heterostructures where the room temperature electron mobilities were found to be 1630 and 1573 cm2 (V s)-1 with corresponding sheet carrier densities of 1.3 and 1.1 × 1013 cm-2, respectively. By these analyses, it could be concluded that the interfaces of HEMT structures with the InGaN channel layer are not as good as that of a conventional GaN channel where either AlGaN or AlInN barriers are used. It could also be pointed out that as the In content in the AlInN barrier layer increases the interface becomes smoother resulted in higher electron mobility.
Interface roughness scattering
Sheet carrier densities
Two-dimensional electron gas (2DEG)
High electron mobility transistors
Ionization of gases
Magnetic field effects
Two dimensional electron gas
Acoustic wave scattering
Published Version (Please cite this version)http://dx.doi.org/10.1088/0268-1242/25/4/045024
Showing items related by title, author, creator and subject.
Tanatar, Bilal; Constantinou, N. C. (Institute of Physics Publishing Ltd., 1994)We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background ...
Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method Lisesivdin, S. B.; Yildiz, A.; Balkan, N.; Kasap, M.; Ozcelik, S.; Özbay, Ekmel (American Institute of Physics, 2010-07-15)We carried out the temperature (22-350 K) and magnetic field (0.05 and 1.4 T) dependent Hall mobility and carrier density measurements on Al 0.22Ga0.78N/GaN heterostructures with AlN interlayer grown by metal-organic ...
Dynamical screening effects in hot-electron scattering from electron-hole plasma and LO-phonon modes in quantum wires Bennett, C. R.; Tanatar, Bilal; Constantinou, N. C. (Elsevier, 1996)We present a fully dynamical and finite temperature study of the hot-electron momentum relaxation rate and the power loss in a coupled system of electron-hole plasma and bulk LO-phonons in a quantum wire structure. ...