Performance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer
Date
2015
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Source Title
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Print ISSN
0734-2101
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AVS Science and Technology Society
Volume
33
Issue
2
Pages
Language
English
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Abstract
The authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on GaN. The UT-HfO2 interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO2 is significantly reduced by more than two orders of magnitude compared to those without HfO2 insertion. The photoresponsivity at 360 nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO2 on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time. © 2015 American Vacuum Society.
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Keywords
Atomic layer deposition , Electron injection , Gallium nitride , Metals , Photodetectors , Photons , Device performance , Fast response time , GaN metal-semiconductor-metal , Orders of magnitude , Performance enhancements , Photodetectors (PDs) , Photoresponsivity , Ultra-violet photodetectors , Hafnium oxides