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dc.contributor.authorTaşçioǧlu, I.en_US
dc.contributor.authorUslu, H.en_US
dc.contributor.authorŞafak, Y.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:58:18Z
dc.date.available2016-02-08T09:58:18Z
dc.date.issued2010en_US
dc.identifier.issn1842-6573
dc.identifier.urihttp://hdl.handle.net/11693/22300
dc.description.abstractThe main electrical parameters such as ideality factor (n), zero bias barrier height (Bo), series resistances (R s), depletion layer width (W D) and interface state densities (N SS) of (Ni/Au)/AlGaN/AlN/GaN heterostructures have been extracted from the current-voltage (I-V) at room temperature, and frequency dependent capacitance voltage (C-V) and conductance-voltage (G/w-V) measurements. The high value of n and R s were attributed to the existence of an interfacial layer (IL) and particular distribution of N ss. The density distrubition profile of N ss was obtained from both forward bias I-V data and low-high frequency (C LF-C HF) measurement methods. In addition, the voltage dependent R s profile obtained both I-V and admittance measurements are in good agreement. As a result, the existence of an IL, R s and N ss lead to deviation from the ideal case of these heterostructures.en_US
dc.language.isoEnglishen_US
dc.source.titleOptoelectronics and Advanced Materials-Rapid Communicationsen_US
dc.subjectC-V-f and G/w-V-f measurementsen_US
dc.subjectInterface statesen_US
dc.subjectNi/Au/AlGaN/AlN/GaNen_US
dc.subjectRsen_US
dc.titleFrequency dependent electrical characteristics of (Ni/Au)/AlGaN/AlN/GaN heterostructuresen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.citation.spage859en_US
dc.citation.epage862en_US
dc.citation.volumeNumber4en_US
dc.citation.issueNumber6en_US
dc.publisherOptoelectronica,National Institute of Research and Development for Optoelectronicsen_US
dc.contributor.bilkentauthorÖzbay, Ekmel


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