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dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorYildiz, A.en_US
dc.contributor.authorBalkan, N.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:57:54Z
dc.date.available2016-02-08T09:57:54Z
dc.date.issued2010-07-15en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/22276
dc.description.abstractWe carried out the temperature (22-350 K) and magnetic field (0.05 and 1.4 T) dependent Hall mobility and carrier density measurements on Al 0.22Ga0.78N/GaN heterostructures with AlN interlayer grown by metal-organic chemical-vapor deposition. Hall data is analyzed with a simple parallel conduction extraction method and temperature dependent mobility and carrier densities of the bulk and two-dimensional (2D) electrons are extracted successfully. The results for the bulk carriers are discussed using a theoretical model that includes the most important scattering mechanisms that contribute to the mobility. In order to investigate the mobility of two-dimensional electron gas, we used a theoretical model that takes into account the polar optical phonon scattering, acoustic phonon scattering, background impurity scattering, and interface roughness scattering in 2D. In these calculations, the values are used for the deformation potential and ionized impurity density values were obtained from the bulk scattering analysis. Therefore, the number of fitting parameters was reduced from four to two. © 2010 American Institute of Physics.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Applied Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3456008en_US
dc.subjectAcoustic-phonon scatteringen_US
dc.subjectAlGaN/GaNen_US
dc.subjectAlNen_US
dc.subjectBackground impuritiesen_US
dc.subjectBulk carrieren_US
dc.subjectBulk scatteringen_US
dc.subjectCarrier densityen_US
dc.subjectDeformation potentialen_US
dc.subjectExtraction methoden_US
dc.subjectFitting parametersen_US
dc.subjectHeterostructuresen_US
dc.subjectInterface roughness scatteringen_US
dc.subjectIonized impuritiesen_US
dc.subjectMetal-organicen_US
dc.subjectParallel conductionen_US
dc.subjectPolar optical phonon scatteringen_US
dc.subjectScattering analysisen_US
dc.subjectScattering mechanismsen_US
dc.subjectTemperature dependenten_US
dc.subjectTheoretical modelsen_US
dc.subjectCarrier concentrationen_US
dc.subjectElectron gasen_US
dc.subjectGalliumen_US
dc.subjectGallium nitrideen_US
dc.subjectGalvanomagnetic effectsen_US
dc.subjectHall mobilityen_US
dc.subjectIonization of gasesen_US
dc.subjectMagnetic fieldsen_US
dc.subjectMetal recoveryen_US
dc.subjectOrganic chemicalsen_US
dc.subjectPhase interfacesen_US
dc.subjectPhonon scatteringen_US
dc.subjectPhononsen_US
dc.subjectSmeltingen_US
dc.subjectTwo dimensionalen_US
dc.subjectTwo dimensional electron gasen_US
dc.titleScattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction methoden_US
dc.typeArticleen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage013712-1en_US
dc.citation.epage013712-7en_US
dc.citation.volumeNumber108en_US
dc.citation.issueNumber1en_US
dc.identifier.doi10.1063/1.3456008en_US
dc.publisherAmerican Institute of Physicsen_US
dc.contributor.bilkentauthorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828en_US


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