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dc.contributor.authorYildiz, A.en_US
dc.contributor.authorLisesivdin, S.B.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorMardare, D.en_US
dc.date.accessioned2016-02-08T09:57:52Z
dc.date.available2016-02-08T09:57:52Z
dc.date.issued2010en_US
dc.identifier.issn0957-4522
dc.identifier.urihttp://hdl.handle.net/11693/22273
dc.description.abstractTitanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates. The relationship between the substrate temperature and the electrical properties of the films was investigated. Electrical resistivity measurements showed that three types of conduction channels contribute to conduction mechanism in the temperature range of 13-320 K. The temperature dependence of electrical resistivity between 150 and 320 K indicated that electrical conductioninthe films was controlled by potential barriers caused by depletion of carriers at grain boundaries. The conduction mechanism of the films was shifted from grain boundary scattering dominated band conduction to the nearest neighbor hopping conduction at temperatures between 55 and 150 K. Below 55 K, the temperature dependence of electrical resistivity shows variable range hopping conduction. The correlation between the substrate temperature and resistivity behaviorisdiscussed by analyzing the physical plausibility of the hopping parameters and material properties derived by applying different conduction models. With these analyses, various electrical parameters of the present samples such as barrier height, donor concentration, density of states at the Fermi level, acceptor concentration and compensation ratio were determined. Their values as a function of substrate temperature were compared. © Springer Science+Business Media, LLC 2009.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Materials Science: Materials in Electronicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s10854-009-9979-zen_US
dc.subjectAcceptor concentrationsen_US
dc.subjectBand conductionen_US
dc.subjectBarrier heightsen_US
dc.subjectCompensation ratioen_US
dc.subjectConduction channelen_US
dc.subjectConduction Mechanismen_US
dc.subjectConduction modelsen_US
dc.subjectDC sputteringen_US
dc.subjectDensity of stateen_US
dc.subjectDonor concentrationsen_US
dc.subjectElectrical parameteren_US
dc.subjectElectrical propertyen_US
dc.subjectElectrical resistivityen_US
dc.subjectElectrical resistivity measurementsen_US
dc.subjectGrain boundary scatteringen_US
dc.subjectHeated glass substratesen_US
dc.subjectHopping parametersen_US
dc.subjectMaterial propertyen_US
dc.subjectNearest neighbor hoppingen_US
dc.subjectPotential barriersen_US
dc.subjectSubstrate temperatureen_US
dc.subjectTemperature dependenceen_US
dc.subjectTemperature rangeen_US
dc.subjectTitanium dioxide thin filmen_US
dc.subjectVariable-range hopping conductionen_US
dc.subjectElectric conductivityen_US
dc.subjectElectric network analysisen_US
dc.subjectGrain boundariesen_US
dc.subjectGrain size and shapeen_US
dc.subjectModelsen_US
dc.subjectOxidesen_US
dc.subjectTemperature distributionen_US
dc.subjectThin filmsen_US
dc.subjectTitaniumen_US
dc.subjectTitanium dioxideen_US
dc.subjectSubstratesen_US
dc.titleThe substrate temperature dependent electrical properties of titanium dioxide thin filmsen_US
dc.typeArticleen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage692en_US
dc.citation.epage697en_US
dc.citation.volumeNumber21en_US
dc.citation.issueNumber7en_US
dc.identifier.doi10.1007/s10854-009-9979-zen_US


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